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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | NTD250N65S3H |
| Width | 2.39mm |
| Mount Type | Surface |
| Series | SUPERFET III |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 250mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 106W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
onsemi NTD250N65S3H is a SUPERFET III Type N-Channel MOSFET designed for advanced power management and switching applications. It features a maximum continuous drain current of 13 A and a maximum drain-source voltage of 650 V, housed in a compact 3-pin TO-252 surface-mount package. This MOSFET leverages charge balance technology to achieve low on-resistance and reduced gate charge, resulting in higher efficiency and reduced losses in power circuits.
This high-performance transistor is capable of dissipating up to 106 W of power and operates reliably across a wide temperature range from -55°C to 175°C, suitable for demanding industrial and commercial electronics environments. The device exhibits a typical gate charge of 24 nC at Vgs, facilitating quick switching, and has a forward voltage of 1.2 V, making it ideal for power control in motor drives, power supplies, and automotive electronics.
The robust design ensures superior switching performance and withstands high dv/dt rates, enhancing reliability in dynamic load conditions. Additionally, the MOSFET is 100% avalanche tested to ensure ruggedness against transient voltage spikes. Its Pb-free and RoHS-compliant construction supports environmental regulations.
Utilizes charge balance technology for outstanding low on-resistance and gate charge. High voltage capability with 650 V drain source voltage. Continuous drain current of 13 A for versatile power applications. Compact 3-pin TO-252 surface mount package for space-efficient PCB design.
Wide operating temperature ranges ensure performance in harsh environments. Maximum power dissipation of 106 W aids thermal handling. Typical gate charge of 24 nC reduces switching losses. Robust forward voltage and avalanche tested for durability.
RoHS compliant and environmentally safe construction. Applications include industrial power management, motor drives, and automotive systems.
This MOSFET is part of the onsemi SUPERFET III series, optimized for minimal conduction loss and superior reliability. It is widely applicable in industrial, laboratory, commercial, and automotive electronic systems where high efficiency and thermal stability are critical. Explore more onsemi semiconductor components and power devices in the Electronics & Electricals category at EnvMart for comprehensive industrial electronics solutions.
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