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onsemi SUPERFET III Type N-Channel MOSFET 13 A 650 V 3-Pin TO-252 NTD250N65S3H

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 6.22mm
Length 6.73mm
Model NTD250N65S3H
Width 2.39mm
Mount Type Surface
Series SUPERFET III
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 13A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 250mΩ
Channel Mode N
Maximum Power Dissipation Pd 106W
Typical Gate Charge Qg @ Vgs 24nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.2V

Key Features

  • Utilizes charge balance technology for low on-resistance and gate charge.
  • Maximum continuous drain current of 13 A enables efficient power handling.
  • Surface mount package with 3 pins for compact PCB integration.
  • Maximum drain source voltage of 650 V provides high voltage endurance.
  • Maximum power dissipation is 106 W for robust thermal performance.
  • Wide operating temperature range from -55°C to 175°C.
  • Typical gate charge of 24 nC optimizes switching speed and efficiency.
  • Forward voltage of 1.2 V suitable for power electronics applications.

Product Description

onsemi NTD250N65S3H is a SUPERFET III Type N-Channel MOSFET designed for advanced power management and switching applications. It features a maximum continuous drain current of 13 A and a maximum drain-source voltage of 650 V, housed in a compact 3-pin TO-252 surface-mount package. This MOSFET leverages charge balance technology to achieve low on-resistance and reduced gate charge, resulting in higher efficiency and reduced losses in power circuits.

This high-performance transistor is capable of dissipating up to 106 W of power and operates reliably across a wide temperature range from -55°C to 175°C, suitable for demanding industrial and commercial electronics environments. The device exhibits a typical gate charge of 24 nC at Vgs, facilitating quick switching, and has a forward voltage of 1.2 V, making it ideal for power control in motor drives, power supplies, and automotive electronics.

The robust design ensures superior switching performance and withstands high dv/dt rates, enhancing reliability in dynamic load conditions. Additionally, the MOSFET is 100% avalanche tested to ensure ruggedness against transient voltage spikes. Its Pb-free and RoHS-compliant construction supports environmental regulations.

Utilizes charge balance technology for outstanding low on-resistance and gate charge. High voltage capability with 650 V drain source voltage. Continuous drain current of 13 A for versatile power applications. Compact 3-pin TO-252 surface mount package for space-efficient PCB design.

Wide operating temperature ranges ensure performance in harsh environments. Maximum power dissipation of 106 W aids thermal handling. Typical gate charge of 24 nC reduces switching losses. Robust forward voltage and avalanche tested for durability.

RoHS compliant and environmentally safe construction. Applications include industrial power management, motor drives, and automotive systems.

This MOSFET is part of the onsemi SUPERFET III series, optimized for minimal conduction loss and superior reliability. It is widely applicable in industrial, laboratory, commercial, and automotive electronic systems where high efficiency and thermal stability are critical. Explore more onsemi semiconductor components and power devices in the Electronics & Electricals category at EnvMart for comprehensive industrial electronics solutions.

onsemi SUPERFET III Type N-Channel MOSFET 13 A 650 V 3-Pin TO-252 NTD250N65S3H
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Frequently Asked Questions

The maximum continuous drain current of this model is 13 A, enabling efficient power handling in various applications.

This MOSFET has a maximum drain-source voltage of 650 V, providing high voltage endurance suitable for power management applications.

The typical gate charge for the NTD250N65S3H is 24 nC, which optimizes switching speed and efficiency in power circuits.

The maximum power dissipation for this MOSFET is 106 W, which aids in robust thermal performance.

The dimensions of the TO-252 package are 6.73 mm in length, 2.39 mm in width, and 6.22 mm in height.

It operates within a wide temperature range from -55°C to 175°C, making it suitable for harsh environments.

This model utilizes a surface mount type, allowing for compact PCB integration.

The forward voltage rating for this MOSFET is 1.2 V, suitable for various power electronics applications.

The maximum gate-source voltage for this model is 30 V, which is important for ensuring proper operation in circuits.

Yes, this MOSFET is RoHS compliant, supporting environmental regulations.

This MOSFET is suitable for applications in industrial power management, motor drives, and automotive systems.

It utilizes charge balance technology to achieve low on-resistance and reduced gate charge, enhancing efficiency in power circuits.

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