DiodesZetex Isolated Dual Type N and Type P-Channel MOSFET, 10.5 A, 30 V Enhancement Mode, 8-Pin SOIC DMC3016LSD-13

The DiodesZetex DMC3016LSD-13 is an isolated dual-channel MOSFET featuring both Type N and Type P enhancement mode transistors. Designed for high efficiency and reliability, it supports a maximum continuous drain current of 10.5 A and a maximum drain-source voltage of 30 V. Its isolated transistor configuration allows secure operation in complex circuitry requiring dual channel functions.

Packaged in a compact 8-pin SOIC surface mount package, the device facilitates dense PCB mounting without compromising performance. The MOSFET exhibits a low maximum drain-source resistance of 20 milliohms, significantly improving energy efficiency by reducing conduction losses.

Rated for maximum power dissipation of 1.6 W, this device is suited for applications involving moderate power levels. It operates reliably over a wide temperature range from -55°C to 150°C, making it applicable in automotive and industrial environments where temperature fluctuations are common.

The typical gate charge of 11.3 nC at gate-source voltage enables fast switching, enhancing overall circuit responsiveness. This product meets multiple industrial and automotive quality standards including RoHS, UL 94V-0 flammability rating, AEC-Q101 automotive qualification, MIL-STD-202 shock and vibration testing, and J-STD-020 moisture sensitivity standards.

Physical dimensions measure 4.95 mm in length, 3.95 mm in width, and 1.5 mm in height, supporting compact and efficient PCB layouts. The dual transistor element per chip structure integrates two MOSFETs, improving circuit design flexibility in electronic, automotive, and power management systems.

High-efficiency enhancement mode MOSFET configuration for isolated operation. Surface mount package with an 8-pin SOIC form factor for compact PCB design. Low on-resistance of 20 milliohms ensures minimized power loss. Excellent thermal performance with maximum power dissipation of 1.6 W.

Wide operating temperature range from -55°C to 150°C for harsh environments. Complies with RoHS, UL 94V-0, AEC-Q101 automotive standards, MIL-STD-202, and J-STD-020 certifications. Typical gate charge of 11.3 nC at Vgs, enabling fast switching capability.

Compact dimensions with 4.95 mm length, 3.95 mm width, and 1.5 mm height. Configurable dual transistor element per chip with isolated dual N/P channel design.

This MOSFET is ideal for industrial electronics, automotive power management, consumer electronics, and other applications requiring reliable switching and low power loss. Select DiodesZetex DMC3016LSD-13 for efficient dual-channel MOSFET performance in demanding electronic systems.

Explore more semiconductor solutions within EnvMart's Electronics & Electricals category for comprehensive industrial component needs.