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onsemi SuperFET Type N-Channel MOSFET, 7 A, 600 V Enhancement, 3-Pin TO-252 FCD7N60TM
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FCD7N60TM |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | SuperFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 7A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.4V |
Key Features
- This MOSFET supports a maximum continuous drain current of 7 amperes.
- It features a maximum drain-source voltage of 600 volts for robust performance.
- The device has a very low drain-source resistance of 600 milliohms.
- It supports a maximum power dissipation of 83 watts.
- Typical gate charge is 23 nanocoulombs at Vgs.
- Maximum gate-source voltage rating is 30 volts.
- The device operates reliably between -55°C and 150°C.
- Compact TO-252 surface mount package with 3 pins.
Product Description
onsemi FCD7N60TM is a SuperFET® Type N-Channel MOSFET designed for high voltage and high current applications that require efficient switching and low losses.
This device supports a maximum continuous drain current of 7 A and a maximum drain-source voltage of 600 V, making it suitable for applications such as industrial power supplies, AC-DC switch mode power supplies (SMPS), telecommunications, computing, UPS systems, and solar inverters.
The FCD7N60TM is housed in a compact 3-pin TO-252 surface mount package, offering a low profile solution with dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height, facilitating efficient PCB layout and thermal management.
Utilizing onsemi's Super Junction Technology, this enhancement mode MOSFET provides best-in-class body diode performance and a low drain-source resistance of 600 milliohms, resulting in improved power density and system reliability.
It supports a maximum power dissipation of 83 watts and features a typical gate charge of 23 nanocoulombs at Vgs, enabling fast switching capabilities. The device maintains stable operation over a wide temperature range from -55°C to +150°C, ensuring durability in various industrial environments.
Maximum continuous drain current of 7 A. Maximum drain-source voltage rating of 600 V. Low Rds(on) of 600 milliohms reduces conduction losses. Maximum power dissipation of 83 W supports high load conditions. Typical gate charge of 23 nC enables efficient switching.
Maximum gate-source voltage of ±30 V prevents gate damage. Wide operating temperature range from -55°C to 150°C. Compact 3-pin TO-252 surface mount package.
This MOSFET is ideal for industrial, telecommunications, computing power supplies, UPS/ESS, and solar inverter applications requiring efficient power switching with high reliability and minimized board space.
Explore the Electronics & Electricals category at EnvMart for a comprehensive range of MOSFETs and power semiconductors.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7 amperes.
This MOSFET has a maximum drain-source voltage rating of 600 volts.
It features a low drain-source resistance of 600 milliohms.
The maximum power dissipation supported by this device is 83 watts.
The typical gate charge at Vgs for this MOSFET is 23 nanocoulombs.
It operates reliably between -55°C and 150°C.
This model is housed in a compact 3-pin TO-252 surface mount package.
The maximum gate-source voltage rating is ±30 volts.
It is suitable for applications such as industrial power supplies, AC-DC switch mode power supplies, telecommunications, computing, UPS systems, and solar inverters.
The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
This model utilizes onsemi's Super Junction Technology, which provides improved body diode performance and reduced conduction losses.
The channel type of this device is N-channel.
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