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ROHM Type P-Channel MOSFET, 200 mA, 20 V Enhancement, 3-Pin SOT-323 RU1C002ZP

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ROHM Type P-Channel MOSFET, 200 mA, 20 V Enhancement, 3-Pin SOT-323 RU1C002ZP

Name: ROHM Type P-Channel MOSFET, 200 mA, 20 V Enhancement, 3-Pin SOT-323 RU1C002ZP
Brand: ROHM
SKU: 196099
Price: 0.09 USD
Availability: InStock

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Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	1mm
Length	2.1mm
Model	RU1C002ZP
Width	1.35mm
Mount Type	Surface
Series	RU1C002ZP
Maximum Operating Temperature	150°C
Package Type	SOT-323
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	200mA
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	1.2Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	150mW
Typical Gate Charge Qg @ Vgs	1.4nC
Maximum Gate Source Voltage Vgs	-10, +10V
Forward Voltage Vf	1.2V

Key Features

Maximum continuous drain current of 200 mA supports low power applications.
Drain-source voltage rating of 20 V ensures reliable switching performance.
Surface mount package type SOT-323 with 3 pins for efficient PCB mounting.
Enhancement mode channel type for efficient switching control.
Maximum drain-source resistance of 1.2 Ω reduces conduction losses.
Maximum power dissipation of 150 mW suitable for low thermal load.
Operating temperature range from -55°C to 150°C ensures durability in diverse environments.
Typical gate charge of 1.4 nC at specified gate voltage optimizes switching speed.

Product Description

ROHM RU1C002ZP Type P-Channel MOSFET is a surface-mounted enhancement mode transistor designed for low power electronics requiring reliable switching. Rated for a maximum continuous drain current of 200 mA and a drain-source voltage of 20 V, this device is supplied in a compact 3-pin SOT-323 package measuring 2.1 mm in length, 1.35 mm in width, and 1 mm in height.

Its low maximum drain-source resistance of 1.2 Ω minimizes conduction losses, making it adequate for power-sensitive applications. The device supports a maximum power dissipation of 150 mW and operates within an extended temperature range from -55°C to 150°C, suitable for use in industrial, automotive (non-automotive standard), and consumer electronic circuits.

The MOSFET features an enhancement mode channel type with a typical gate charge of 1.4 nC at Vgs, enabling fast switching for efficient circuit response. The gate-source voltage tolerates ±10 V, allowing flexibility in drive signals, and it demonstrates a forward voltage of 1.2 V in operation.

ROHM’s RU1C002ZP complies with RoHS environmental standards, supporting sustainable product design initiatives. Its compact form factor and surface mount design simplify integration into printed circuit boards for manufacturing efficiency in electronics production lines.

Maximum continuous drain current: 200 mA for low power switching applications. Drain-source voltage rating of 20 V suitable for general purpose. Surface mount SOT-323 package improves PCB density. Enhancement channel mode provides efficient switching.

Low maximum drain-source resistance lowers power loss. High temperature tolerance (-55°C to 150°C) ensures reliability. RoHS compliant for environmental safety. Compact dimensions: 2.1 mm length, 1.35 mm width, 1 mm height.

This MOSFET is ideal for use in industrial automation, consumer electronics, telecommunications, and other applications that require compact, low-power switching components. Explore a wide range of semiconductor components and discrete MOSFETs in the Electronics & Electricals category at EnvMart for your project and production needs.