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onsemi Isolated PowerTrench Dual Type P, Type N-Channel MOSFET, 3 A, 20 V, 6-Pin SSOT FDC6420C
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | FDC6420C |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SSOT |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 960mW |
| Typical Gate Charge Qg @ Vgs | 3.3nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | 0.7V |
| Transistor Configuration | Isolated |
Key Features
- Operating temperature ranges from -55°C to a maximum of 150°C.
- Maximum power dissipation is 960 mW suitable for compact power applications.
- Features a low 190 mΩ drain-source resistance enabling efficient power switching.
- Typical gate charge of 3.3 nC at Vgs ensures fast switching performance.
- Enhancement mode channel with isolated transistor configuration for improved system efficiency.
- Suitable for synchronous rectification in AC/DC power supplies and industrial electronics.
Product Description
onsemi FDC6420C is an Isolated PowerTrench dual Type P, Type N-Channel MOSFET designed for high efficiency and compact power switching applications. It supports a maximum continuous drain current of 3 A and a maximum drain-source voltage of 20 V, encased in a 6-pin SSOT surface mount package.
The MOSFET features a shielded-gate structure for charge balance, ensuring a significantly lower figure of merit compared to previous generations. Its soft reverse recovery body diode improves switching efficiency by eliminating snubber circuit requirements in synchronous rectification.
Operating temperature capabilities range from -55°C minimum to 150°C maximum, making it suitable for demanding industrial environments. With a maximum power dissipation of 960 mW and a drain-source resistance of 190 mΩ, it provides efficient performance in power management circuits.
This dual MOSFET's compact 3 mm x 1.7 mm x 1 mm housing and enhancement mode isolated transistor configuration make it ideal for AC/DC power supply circuits, industrial, laboratory, and manufacturing applications requiring high system efficiency and power density.
Operating temperature ranges from -55°C to 150°C. Maximum continuous drain current of 3 A with 20 V drain-source voltage. Maximum power dissipation of 960 mW. Low drain-source resistance of 190 mΩ for efficient operation.
Typical gate charge of 3.3 nC for fast switching. Compact 6-pin SSOT package with dimensions of 3 mm length, 1.7 mm width, and 1 mm height. Isolated transistor configuration with enhancement mode channel.
PowerTrench MOSFETs from onsemi are optimized power switches that increase system efficiency and power density. The FDC6420C model’s advanced technology enables enhanced charge balance and soft body diode characteristics for improved performance.
This device is suitable for integration in power electronics systems in industrial machines, electronic manufacturing equipment, power supplies, and laboratory instrumentation requiring reliable semiconductor switching components.
Explore the extensive range of semiconductor MOSFETs at EnvMart for your electronic component sourcing needs.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3 A.
It supports a maximum drain-source voltage of 20 V.
The dimensions are 3 mm in length, 1.7 mm in width, and 1 mm in height.
The typical gate charge is 3.3 nC at Vgs.
The maximum power dissipation is 960 mW.
The operating temperature ranges from -55°C to a maximum of 150°C.
It features an isolated transistor configuration with enhancement mode channel.
The drain-source resistance is 190 mΩ, enabling efficient operation.
It comes in a 6-pin SSOT surface mount package.
This model is suitable for synchronous rectification in AC/DC power supplies and industrial electronics.
The maximum gate-source voltage is 12 V.
It has 2 elements per chip.
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