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onsemi N-Channel MOSFET, 12A 100V, Enhancement Mode, TO-220, 3-Pin, RFP12N10L

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onsemi N-Channel MOSFET, 12A 100V, Enhancement Mode, TO-220, 3-Pin, RFP12N10L

Name: onsemi N-Channel MOSFET, 12A 100V, Enhancement Mode, TO-220, 3-Pin, RFP12N10L
Brand: onsemi
SKU: 86514
Price: 1.11 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	9.4mm
Length	10.67mm
Model	RFP12N10L
Width	4.83mm
Mount Type	Through Hole
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type N
Maximum Continuous Drain Current Id	12A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	200mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	60W
Maximum Gate Source Voltage Vgs	10V
Forward Voltage Vf	1.2V
onsemi Type N-Channel MOSFET, 12 A, 100 V Enhancement, 3-Pin TO-220Brand	onsemi

Key Features

Delivers a maximum continuous drain current of 12A for medium and high current circuits.
Handles high voltages up to 100V, making it suitable for robust power electronics designs.
Features a low drain-source resistance of 200 mΩ to reduce power losses and heating.
Comes in a 3-pin TO-220 through-hole package for easy PCB mounting.
Enhancement mode operation ensures fast switching and efficiency.
Wide operating temperature from -55°C up to 150°C for diverse environments.
Supports power dissipation up to 60W, allowing for reliable performance in demanding loads.
Maximum gate-source voltage up to 10V permits flexible gate-drive requirements.

Product Description

The onsemi RFP12N10L is an N-Channel enhancement mode MOSFET offering efficient and reliable operation for power switching and control in electronic circuits. This device supports a continuous drain current of up to 12A and can handle drain-source voltages up to 100V, making it a strong choice for medium to high current switching applications. It is ideal for motor drivers, power supplies, UPS, inverters, and other industrial or commercial electronics requiring reliable high-speed switching.

With a low drain-source resistance of only 200 mΩ, the RFP12N10L minimizes conduction losses and thermal dissipation, resulting in better energy efficiency and less heat generation even under demanding loads. Its enhancement mode operation ensures the device remains off until a positive gate-source voltage is applied, offering safe default states and easy control via logic-level signals.

The robust TO-220 package supports through-hole mounting for stable mechanical installation and effective heat sinking. The package dimensions - length 10.67 mm, width 4.83 mm, height 9.4 mm - make it suitable for a variety of industrial layouts. The MOSFET operates reliably across a broad temperature range from -55°C up to 150°C, confirming its suitability for challenging environments found in industrial control, automation, automotive, and power distribution applications. It complies with automotive standard AEC-Q101 and is designed for both commercial and automotive-grade use cases.

This MOSFET features a maximum power dissipation of 60W, a forward voltage drop of 1.2V, and maximum gate-source voltage ratings of 10V, ensuring dependable performance under heavy and fast-switching loads. Its 3-pin construction enables straightforward integration into standard power electronics PCBs. The part is RoHS-compliant to meet modern environmental and regulatory criteria.

Applications include power supply output stages, DC - DC converters, relay replacements, motor control circuits, battery management systems, and industrial electronic assemblies. Explore more power semiconductors, N-Channel MOSFETs, and industrial electronics from onsemi on EnvMart for additional solutions to your power switching needs.

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Frequently Asked Questions

The maximum continuous drain current for the RFP12N10L is 12A, making it suitable for medium and high current circuits.

This model can handle a maximum drain-source voltage of 100V, allowing it to be used in robust power electronics designs.

The RFP12N10L comes in a TO-220 package type and is designed for through-hole mounting, making it easy to integrate into PCBs.

This MOSFET operates reliably across a temperature range from -55°C to 150°C, suitable for diverse environments.

The enhancement mode operation ensures that the device remains off until a positive gate-source voltage is applied, providing safe default states and easy control via logic-level signals.

The maximum power dissipation for the RFP12N10L is 60W, allowing it to perform reliably under demanding loads.

The maximum drain-source resistance for this model is 200 mΩ, which helps minimize conduction losses and thermal dissipation.

The maximum gate-source voltage rating for the RFP12N10L is 10V, providing flexibility for gate-drive requirements.

The dimensions of this MOSFET are 10.67 mm in length, 4.83 mm in width, and 9.4 mm in height.

The RFP12N10L complies with the automotive standard AEC-Q101, making it suitable for automotive applications.

This MOSFET is suitable for applications such as motor drivers, power supplies, UPS, inverters, and other industrial electronics requiring reliable high-speed switching.

The forward voltage drop for the RFP12N10L is 1.2V, which is relevant for its performance in switching applications.