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Infineon OptiMOS 5 Type N-Channel MOSFET, 49 A Current, 80 V Drain Source Voltage, 8-Pin SuperSO Package BSC117N08NS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.2mm |
| Length | 5.35mm |
| Model | BSC117N08NS5ATMA1 |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | OptiMOS 5 |
| Maximum Operating Temperature | 150°C |
| Package Type | SuperSO |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 49A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 11.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 50W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- The device has a maximum continuous drain current of 49A for heavy-load handling.
- It supports a maximum drain-source voltage rating of 80V for high-voltage switching applications.
- The MOSFET is supplied in an 8-pin SuperSO surface-mount package with a low profile of 1.2mm height.
- It features a low on-resistance of 11.7 milliohms to minimize conduction losses.
- The typical gate charge of 15 nanocoulombs ensures responsive switching control.
- The maximum power dissipation is 50W, providing robust thermal performance.
- Operating temperature range is from -55°C to 150°C, suitable for harsh thermal conditions.
- The gate-source voltage rating is ±20V to avoid device damage.
Product Description
Infineon BSC117N08NS5ATMA1 is an OptiMOS 5 series N-channel MOSFET designed for power electronics requiring efficient conduction and fast switching capabilities.
This device supports a continuous drain current of 49A and can withstand a maximum drain-source voltage of 80V, making it ideal for high-current and high-voltage applications such as DC-DC converters, synchronous rectification, motor controllers, telecoms, and server power distribution.
The MOSFET is housed in a compact 8-pin SuperSO surface-mount package with a height of 1.2mm and dimensions of 6.1mm width by 5.35mm length. This package facilitates dense board-level design with low inductance routing for improved performance.
Key electrical characteristics include a low on-state resistance of 11.7 milliohms which reduces conduction losses, a typical gate charge of 15 nanocoulombs ensuring fast and responsive switching, and a forward voltage of 1.1V under conduction conditions.
The device is rated for operation between -55°C and 150°C, enabling it to withstand demanding thermal environments commonly encountered in industrial and commercial power electronics.
Its maximum power dissipation of 50W supports robust thermal management in compact assemblies. Low on-resistance of 11.7 milliohms for reduced conduction losses. High continuous drain current rating of 49A for heavy load handling.
Supports 80V drain-source voltage for high-voltage applications. Compact 8-pin SuperSO surface mount package with low profile height. Fast switching control with 15nC gate charge. Wide operating temperature range from -55°C to 150°C.
Maximum power dissipation of 50W for thermal robustness. Forward voltage of 1.1V under conduction. Maximum gate-source voltage rating of ±20V to protect the device.
This MOSFET is extensively used in industrial, telecommunications, and commercial electronic power supply designs demanding efficient, compact, and high-performance semiconductor switches.
Explore a broad range of semiconductor and power MOSFET components with Infineon's OptiMOS technology at EnvMart for your next industrial design project.
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Frequently Asked Questions
The maximum continuous drain current of this model is 49A, making it suitable for heavy-load handling applications.
It supports a maximum drain-source voltage rating of 80V, which is ideal for high-voltage switching applications.
This MOSFET is housed in an 8-pin SuperSO surface-mount package with dimensions of 6.1mm in width, 5.35mm in length, and a height of 1.2mm.
The typical gate charge is 15 nanocoulombs, ensuring responsive switching control.
The maximum power dissipation is rated at 50W, providing robust thermal performance.
It operates within a temperature range of -55°C to 150°C, suitable for harsh thermal conditions.
The on-resistance is 11.7 milliohms, which helps minimize conduction losses.
The maximum gate-source voltage rating is ±20V, which helps protect the device from damage.
This model is suitable for applications such as DC-DC converters, synchronous rectification, motor controllers, and telecom power distribution.
The forward voltage under conduction conditions is 1.1V.
This device features an N-channel type, which is common for power MOSFET applications.
The country of origin for this MOSFET is India.
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