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onsemi PowerTrench Type N-Channel MOSFET, 265 A, 60 V Enhancement, 3-Pin TO-220 FDP025N06

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 15.7mm
Length 9.9mm
Model FDP025N06
Width 4.5mm
Mount Type Through Hole
Series PowerTrench
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 265A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 2.5mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 395W
Typical Gate Charge Qg @ Vgs 174nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.3V

Key Features

  • This MOSFET features an enhancement channel mode suitable for high efficiency switching applications.
  • Maximum power dissipation is rated at 395 W for robust thermal handling.
  • The forward voltage is 1.3 V, optimizing conduction losses.
  • Designed for operation from -55°C to 175°C for reliability in various industrial environments.
  • Package type TO-220 enables through-hole mounting with convenient pin layout.
  • Gate charge typical value is 174 nC at Vgs, facilitating fast switching.
  • Maximum gate-source voltage rating is 20 V to protect gate oxide.
  • Low maximum drain-source resistance of 2.5 mΩ ensures high current capability.

Product Description

onsemi FDP025N06 PowerTrench Type N-Channel MOSFET is a high-performance transistor designed for efficient power management in industrial and electronic applications. Featuring a maximum continuous drain current of 265 A and a maximum drain-source voltage of 60 V, it is suited for high-current switching circuits requiring low on-resistance and high reliability. The device employs PowerTrench technology delivering a low Rds(on) of 2.5 mΩ, minimizing power loss and heat generation.

This MOSFET package comes in a 3-pin TO-220 form factor ideal for through-hole mounting on PCBs or heatsinks. It supports an enhancement channel mode and tolerates a maximum gate-source voltage of 20 V, ensuring control safety. The device characteristics include a maximum power dissipation rating of 395 W, forward voltage of 1.3 V, and typical gate charge of 174 nC, all contributing to optimized switching performance.

Operating temperature range from -55°C to 175°C makes the FDP025N06 suitable for demanding environments found in industrial power supplies, motor controls, and power converters. The device dimensions (15.7 mm height, 4.5 mm width, 9.9 mm length) allow compact installation in system designs requiring efficient thermal management.

This MOSFET features an enhancement channel mode suitable for high efficiency switching applications. Maximum power dissipation is rated at 395 W for robust thermal handling. The forward voltage is 1.3 V, optimizing conduction losses.

Designed for operation from -55°C to 175°C for reliability in various industrial environments. Package type TO-220 enables through-hole mounting with convenient pin layout. Gate charge typical value is 174 nC at Vgs, facilitating fast switching.

Maximum gate-source voltage rating is 20 V to protect gate oxide. Low maximum drain-source resistance of 2.5 mΩ ensures high current capability. Compact dimensions: height 15.7 mm, width 4.5 mm, and length 9.9 mm.

This product is ideal for industrial electronics, power management systems, motor drives, and other applications requiring dependable high-current MOSFETs. onsemi maintains industry standards with PowerTrench devices that balance performance and thermal efficiency.

Explore the Electronics & Electricals Semiconductor MOSFET category at EnvMart for more on superior electronic components including MOSFETs and discrete semiconductors.

onsemi PowerTrench Type N-Channel MOSFET, 265 A, 60 V Enhancement, 3-Pin TO-220 FDP025N06
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Frequently Asked Questions

The maximum continuous drain current for this model is 265 A.

This MOSFET has a maximum drain-source voltage rating of 60 V.

The maximum power dissipation rating is 395 W, allowing for robust thermal handling.

The typical gate charge at Vgs is 174 nC, facilitating fast switching.

It is designed to operate within a temperature range of -55°C to 175°C.

The maximum gate-source voltage rating is 20 V, which helps protect the gate oxide.

The dimensions are 15.7 mm in height, 4.5 mm in width, and 9.9 mm in length.

This model supports through-hole mounting, thanks to its TO-220 package type.

The maximum drain-source resistance is 2.5 mΩ, ensuring high current capability.

This device utilizes a Type N channel, suitable for enhancement mode applications.

The forward voltage is rated at 1.3 V, optimizing conduction losses.

This model is ideal for industrial electronics, power management systems, and motor drives.

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