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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 15.7mm |
| Length | 9.9mm |
| Model | FDP025N06 |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 265A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 2.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 395W |
| Typical Gate Charge Qg @ Vgs | 174nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
onsemi FDP025N06 PowerTrench Type N-Channel MOSFET is a high-performance transistor designed for efficient power management in industrial and electronic applications. Featuring a maximum continuous drain current of 265 A and a maximum drain-source voltage of 60 V, it is suited for high-current switching circuits requiring low on-resistance and high reliability. The device employs PowerTrench technology delivering a low Rds(on) of 2.5 mΩ, minimizing power loss and heat generation.
This MOSFET package comes in a 3-pin TO-220 form factor ideal for through-hole mounting on PCBs or heatsinks. It supports an enhancement channel mode and tolerates a maximum gate-source voltage of 20 V, ensuring control safety. The device characteristics include a maximum power dissipation rating of 395 W, forward voltage of 1.3 V, and typical gate charge of 174 nC, all contributing to optimized switching performance.
Operating temperature range from -55°C to 175°C makes the FDP025N06 suitable for demanding environments found in industrial power supplies, motor controls, and power converters. The device dimensions (15.7 mm height, 4.5 mm width, 9.9 mm length) allow compact installation in system designs requiring efficient thermal management.
This MOSFET features an enhancement channel mode suitable for high efficiency switching applications. Maximum power dissipation is rated at 395 W for robust thermal handling. The forward voltage is 1.3 V, optimizing conduction losses.
Designed for operation from -55°C to 175°C for reliability in various industrial environments. Package type TO-220 enables through-hole mounting with convenient pin layout. Gate charge typical value is 174 nC at Vgs, facilitating fast switching.
Maximum gate-source voltage rating is 20 V to protect gate oxide. Low maximum drain-source resistance of 2.5 mΩ ensures high current capability. Compact dimensions: height 15.7 mm, width 4.5 mm, and length 9.9 mm.
This product is ideal for industrial electronics, power management systems, motor drives, and other applications requiring dependable high-current MOSFETs. onsemi maintains industry standards with PowerTrench devices that balance performance and thermal efficiency.
Explore the Electronics & Electricals Semiconductor MOSFET category at EnvMart for more on superior electronic components including MOSFETs and discrete semiconductors.
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