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onsemi PowerTrench Type P-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC FDS6675BZ

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onsemi PowerTrench Type P-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC FDS6675BZ

Name: onsemi PowerTrench Type P-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC FDS6675BZ
Brand: onsemi
SKU: 125861
Price: 0.61 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.5mm
Length	5mm
Model	FDS6675BZ
Width	4mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	SOIC
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	Type P
Maximum Continuous Drain Current Id	11A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	13mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.5W
Typical Gate Charge Qg @ Vgs	44nC
Maximum Gate Source Voltage Vgs	-25, +25V
Forward Voltage Vf	-1.2V
P-Channel MOSFET Transistor, 17 A, 30 V, 8-Pin SOIC Diodes Inc ZXMP3F35N8TABrand	DiodesZetex

Key Features

PowerTrench® technology provides enhanced system power efficiency.
Low typical gate charge of 44 nC enables fast switching performance.
Maximum drain-source resistance of 13 milliohms ensures low conduction losses.
Operates over a wide temperature range from -55°C to 150°C.
Compact SOIC package measures 5 mm length, 4 mm width, and 1.5 mm height.
Maximum power dissipation rating of 2.5 Watts supports reliable operation.
Surface mount design suitable for automated PCB assembly.
Soft reverse recovery body diode reduces switching noise and power losses.

Product Description

onsemi FDS6675BZ PowerTrench Type P-Channel Enhancement Mode MOSFET is engineered for industrial and commercial electronic applications requiring efficient power switching. The device features a maximum continuous drain current of 11 A and a maximum drain-source voltage of 30 V, delivered in a compact 8-pin SOIC surface mount package measuring 5 mm x 4 mm x 1.5 mm.

Utilizing PowerTrench® technology, this MOSFET offers a low typical gate charge of 44 nC and an exceptionally low on-resistance of 13 mΩ, resulting in reduced conduction losses and enhanced switching efficiencies. The device supports a wide operating temperature range from -55°C to 150°C, making it suitable for demanding environments.

The FDS6675BZ incorporates a shielded-gate structure to balance charge and improve figure of merit (FOM), benefiting synchronous rectification in AC/DC power supplies. Its soft reverse recovery body diode enables elimination of snubber circuits or downsizing of MOSFET ratings in power management designs.

Designed for surface mount technology (SMT), this MOSFET ensures ease of integration on PCBs for power supply, motor control, and switching applications across industrial, manufacturing, automotive, and consumer electronics sectors.

PowerTrench® technology delivers increased system efficiency and power density. Low gate charge enhances switching speed and reduces losses. Soft body diode reduces electromagnetic interference and power dissipation. Wide operating temperature range supports harsh industrial environments.

Compact SOIC 8-pin package fits automated assembly lines. Surface mount mount type suitable for modern electronic designs. Voltage ratings ideal for 30 V power management systems. Robust gate voltage tolerance ±25 V enhances reliability.

Typical forward voltage of -1.2 V contributes to stable conduction characteristics.

This product is classified under Electronics & Electricals > Semiconductor > MOSFET, making it a key component for electronics engineers and system designers. Explore the wide range of onsemi products available on EnvMart for advanced semiconductor solutions.