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Infineon CoolMOS C3 Type N-Channel MOSFET 11 A 800 V Enhancement 3-Pin TO-247 SPW11N80C3FKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.1mm |
| Length | 16.13mm |
| Model | SPW11N80C3FKSA1 |
| Width | 5.16mm |
| Mount Type | Through Hole |
| Series | CoolMOS C3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 450mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 156W |
| Typical Gate Charge Qg @ Vgs | 64nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed for high efficiency power conversion applications.
- Features enhancement mode channel operation for reliable switching.
- Maximum power dissipation of 156 W enables effective heat handling.
- Typical gate charge of 64 nC supports fast switching speeds.
- Robust operating temperature range from -55°C to 150°C for versatile use.
- Through-hole mount with TO-247 package simplifies assembly and cooling.
- Low maximum drain source resistance of 450 mΩ reduces conduction losses.
- Maximum gate source voltage of 20 V ensures gate protection.
Product Description
Infineon SPW11N80C3FKSA1 CoolMOS C3 Type N-Channel MOSFET is a high-performance transistor designed for a wide range of industrial and electronic power conversion applications. This device features a maximum continuous drain current of 11 amperes and a maximum drain source voltage rating of 800 volts, making it suitable for efficient handling of high power loads.
The MOSFET operates in enhancement mode and is housed in a robust TO-247 package with 3 pins, designed for through-hole mounting which allows easy integration on printed circuit boards and effective heat dissipation. With a typical gate charge of 64 nC at gate-source voltage and a maximum gate source voltage rating of 20 V, this transistor offers rapid switching capabilities combined with strong gate protection.
Engineered for thermal resilience, the device supports operation in temperatures ranging from -55°C to 150°C. Its low drain source resistance of 450 mΩ minimizes conduction losses, enhancing overall efficiency in power circuits. The device’s compact dimensions (21.1 mm height, 16.13 mm length, and 5.16 mm width) make it adaptable for applications with space constraints.
Designed for efficient power switching and conversion in industrial systems. Suitable for use in inverters, power supplies, and motor controls. Supports high voltage and current applications while maintaining reliability.
Facilitates improved power density and reduced energy consumption. Compliant with general industrial standards, although no specific certifications listed. This MOSFET is ideal for use in manufacturing, industrial automation, power management, and other electrical engineering domains requiring robust semiconductor performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 amperes.
This unit has a maximum drain source voltage rating of 800 volts.
The typical gate charge at gate-source voltage is 64 nC.
It supports a maximum power dissipation of 156 watts.
The dimensions are 21.1 mm in height, 16.13 mm in length, and 5.16 mm in width.
The operating temperature range is from -55°C to 150°C.
It features a through-hole mount type, which simplifies assembly and cooling.
The maximum gate source voltage is rated at 20 volts.
The maximum drain source resistance is 450 mΩ, which helps reduce conduction losses.
This MOSFET is suitable for use in inverters, power supplies, and motor controls.
It is a Type N-channel MOSFET, designed for enhancement mode operation.
This model belongs to the CoolMOS C3 series.
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