$0.98
$0.95
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon HEXFET N-Channel MOSFET 80 A 75 V Enhancement Mode 140 W TO-220 IRFB3607PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.02mm |
| Length | 10.66mm |
| Model | IRFB3607PBF |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 56nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- The device supports a maximum continuous drain current of 80 A for robust operation.
- It sustains a drain-source voltage of up to 75 V in enhancement mode.
- Packaged in a 3-pin TO-220 through-hole form factor with a low Rds(on) of 9 mΩ.
- Capable of dissipating up to 140 W of power with operating temperatures from -55°C to 175°C.
- Typical gate charge is 56 nC, allowing efficient switching performance.
- Maximum gate-source voltage ranges between -20 V and +20 V ensuring reliable gate control.
- Forward voltage drop is typically 1.3 V, minimizing conduction losses.
- Compact dimensions measure 10.66 mm length, 4.82 mm width, and 9.02 mm height.
Product Description
Infineon IRFB3607PBF HEXFET N-Channel MOSFET is a robust semiconductor device built for demanding power applications requiring efficient switching and high current capability.
With a maximum continuous drain current of 80 A and a drain-source voltage rating of 75 V, this transistor excels in motor control circuits and synchronous rectifier designs used in power supplies and converters.
The enhancement mode channel with a low drain-source resistance of 9 mΩ enhances performance by reducing power losses and increasing efficiency. Packaged in a 3-pin TO-220 through-hole configuration, the device ensures ease of mounting and heat dissipation with a maximum power dissipation of 140 W.
The operating temperature range spans from -55°C to +175°C, permitting operation in harsh industrial and commercial environments. Its typical gate charge of 56 nC facilitates fast switching, and the gate-source voltage rating from -20 V to +20 V offers flexibility in drive circuits.
Applications include motor controllers, AC-DC synchronous rectifiers, power converters, and general high-efficiency power electronics. The MOSFET has dimensions approximately 10.66 mm in length, 4.82 mm in width, and 9.02 mm in height.
Infineon's HEXFET technology delivers superior ruggedness and switching performance for electronic systems. The device is ideal for industrial automation, power management, and consumer electronics requiring high reliability and efficiency.
This Infineon MOSFET exemplifies quality semiconductor engineering, supporting designs that demand large current capability and stable high voltage operation within a compact footprint.
Discover more Infineon semiconductor components and power MOSFETs in EnvMart's extensive catalog for your industrial and electronic projects.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 80 A, enabling robust operation in various applications.
This MOSFET sustains a drain-source voltage of up to 75 V in enhancement mode, suitable for high voltage applications.
It is capable of dissipating up to 140 W of power, making it suitable for demanding power applications.
The dimensions of this model are approximately 10.66 mm in length, 4.82 mm in width, and 9.02 mm in height.
The typical gate charge for the IRFB3607PBF is 56 nC, facilitating efficient switching performance.
This MOSFET can operate at a maximum temperature of 175°C, allowing for use in harsh environments.
This model uses a through-hole mounting type, which aids in heat dissipation during operation.
The IRFB3607PBF features an N-channel type, suitable for various power applications.
The maximum gate-source voltage ranges between -20 V and +20 V, ensuring reliable gate control.
The forward voltage drop is typically 1.3 V, which minimizes conduction losses in the circuit.
The minimum operating temperature for this model is -55°C, allowing it to function in extreme conditions.
This MOSFET is suitable for applications such as motor controllers, AC-DC synchronous rectifiers, and power converters.
Related Products
Other Products from this brand
Recently Viewed Products
$0.98
$0.95
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent