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Vishay TrenchFET N-Channel MOSFET, 100 A, 40 V, Enhancement Mode, 3-Pin TO-252 SQR40020ER_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.57mm |
| Length | 10.41mm |
| Model | SQR40020ER_GE3 |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101 |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.00233Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 107W |
| Typical Gate Charge Qg @ Vgs | 84nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Features an enhancement mode channel for precise switching performance.
- Maximum continuous drain current is 100 amperes.
- Drain-source voltage rated at 40 volts for robust operation.
- Low on-resistance of 0.00233 ohms ensures high efficiency.
- Power dissipation capability up to 107 watts.
- Typical gate charge of 84 nanocoulombs at rated gate voltage.
- Operates reliably across a wide temperature range from -55°C to 175°C.
- Complies with automotive standard AEC-Q101, suitable for automotive applications.
Product Description
The Vishay SQR40020ER_GE3 is a TrenchFET N-Channel MOSFET designed for high current and low voltage applications, providing excellent power efficiency and thermal performance. It supports a maximum continuous drain current of 100 A and a maximum drain-to-source voltage of 40 V. Packaged in a 3-pin TO-252 surface mount package, it features a low Rds(on) of 0.00233 ohms, minimizing conduction losses and improving overall efficiency.
This device operates reliably in demanding environments with an operational temperature range from -55°C to 175°C and is compliant with the AEC-Q101 automotive standard, making it suitable for automotive and industrial applications.
The enhancement mode channel configuration offers precise control of the MOSFET switching behavior, with a typical gate charge of 84 nC at the rated gate voltage. Its power dissipation rating of 107 W ensures high power handling capability in compact form factor.
Typical applications include automotive electronics power management, industrial power supplies, DC-DC converters, and other high-current switching systems where efficiency and thermal stability are critical. Its Ni-plated drain tab area allows for improved heat sinking and thermal dissipation when mounted.
Enhancement mode N-channel MOSFET optimized for low on-resistance and high current capability. Surface mount TO-252 package provides low thermal resistance and efficient PCB mounting. Wide temperature operation from -55°C to 175°C supports harsh industrial and automotive environments.
Compliance with AEC-Q101 automotive standards ensures reliability and quality. Ideal for high power DC switching and power management applications. Explore the wide range of semiconductor components at EnvMart for efficient and reliable industrial and automotive power solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
This MOSFET has a maximum drain-to-source voltage rating of 40 V.
The typical gate charge at the rated gate voltage is 84 nanocoulombs (nC).
The dimensions of the TO-252 package are 10.41 mm in length, 9.65 mm in width, and 4.57 mm in height.
It operates reliably across a wide temperature range from -55°C to 175°C.
The maximum drain-source resistance (Rds) is 0.00233 ohms, ensuring high efficiency.
Yes, it complies with the AEC-Q101 automotive standard, making it suitable for automotive applications.
The maximum power dissipation capability of this model is 107 watts.
This model features an enhancement mode N-channel configuration for precise control of switching behavior.
The maximum gate-source voltage for this MOSFET is 20 V.
This model is designed for surface mounting.
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