onsemi PowerTrench Type P-Channel MOSFET, 3.4 A, 30 V Enhancement Surface Mount, 4-Pin SOT-223 FDT458P

onsemi FDT458P PowerTrench Type P-Channel MOSFET is a high-performance semiconductor device designed for industrial, electronic, and power management applications. It features a 4-pin SOT-223 surface mount package optimized for enhanced system efficiency and power density, making it suitable for compact and lightweight designs.

The device operates with a continuous drain current rating of 3.4 A and a maximum drain-source voltage of 30 V, supporting robust performance in switching applications. Utilizing PowerTrench technology, it achieves a low on-state resistance of 130 milliohms, which significantly reduces conduction losses and improves thermal performance.

Designed with enhancement mode channel technology, this MOSFET offers a typical gate charge of only 2.5 nC, enabling fast switching speeds essential for synchronous rectification and power supply circuits. The device's forward voltage is -1.2 V with a maximum gate-source voltage of 20 V, and it withstands operating temperatures from -55°C up to 150°C, ensuring reliability in harsh environments.

Compact dimensions (6.5 mm length × 3.56 mm width × 1.6 mm height) allow flexible circuit design while the surface mount package provides easy assembly in automated manufacturing. The PowerTrench MOSFET’s low reverse recovery charge and soft body diode characteristics help eliminate snubber circuits and improve overall circuit performance.

This MOSFET is widely used in industrial electronics, power supplies, automotive electronics, and consumer devices requiring efficient power switching with compact size and low electrical losses.

Features a PowerTrench series optimized for power efficiency. Employs an enhancement mode channel for improved control. Supports a maximum continuous drain current of 3.4 amperes. Surface mount design for compact PCB integration.

Maximum drain-source resistance of 130 milliohms ensures low conduction losses. Capable of dissipating up to 3 watts of power safely. Operating temperature range from -55°C to 150°C for reliability. Low typical gate charge of 2.5 nanocoulombs allows fast switching.

Package dimensions: length 6.5 mm, width 3.56 mm, height 1.6 mm. Explore more semiconductor products like MOSFETs and power semiconductors under onsemi brand at EnvMart.