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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS9435A |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 5.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 50mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | -1.2V |
onsemi FDS9435A PowerTrench Type P-Channel MOSFET is a discrete semiconductor device designed for industrial and electronic applications requiring efficient power switching.
This device supports a maximum continuous drain current of 5.3 A and a maximum drain-to-source voltage of 30 V, operating in an enhancement mode configuration within an 8-pin SOIC surface-mount package.
The PowerTrench technology enhances system efficiency and power density by incorporating a shielded-gate structure that reduces gate charge and reverse recovery charge significantly, enabling fast switching and improved thermal performance.
The MOSFET's soft reverse recovery body diode reduces switching losses and eliminates the need for additional snubber components, making it ideal for synchronous rectification in AC/DC power supplies and other power management circuits.
With a maximum operating temperature of 175°C and a wide temperature operating range down to -55°C, the FDS9435A is reliable in demanding industrial environments. Compact physical dimensions (1.5 mm height, 4 mm width, 5 mm length) make it suitable for dense PCB layouts and space-constrained applications.
Key electrical specifications include a maximum drain-source resistance of 50 mΩ and maximum gate-to-source voltage of 25 V, ensuring stable and efficient switching capability across varied conditions.
PowerTrench MOSFETs optimize system efficiency and power density. Features low gate charge and small reverse recovery charge for fast switching. Includes shielded-gate structure ensuring superior figure of merit. Soft reverse recovery body diode eliminates need for snubber circuits.
Suitable for AC/DC power supplies and synchronous rectification applications. Operates within temperature range -55°C to 175°C. Maximum power dissipation of 2.5 W for reliable performance. Compact dimensions with 1.5 mm height, 4 mm width, and 5 mm length.
This MOSFET is widely used in industrial, power supply, consumer electronics, and automotive electronic circuit designs, providing efficient switching and energy savings. Explore the semiconductor section for more onsemi PowerTrench MOSFETs and related discrete semiconductor components at EnvMart.
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