Infineon CoolMOS Type N-Channel MOSFET 15 A 700 V 3-Pin TO-247 IPW65R155CFD7XKSA1

Infineon IPW65R155CFD7XKSA1 CoolMOS Type N-Channel MOSFET, rated at 15 A and 700 V, in a 3-Pin TO-247 package, is engineered for efficient power switching and management. This semiconductor device is suitable for high power resonant topologies and industrial applications including server power supplies, telecommunications, solar inverters, and electric vehicle charging stations.

Its CoolMOS super junction technology combined with a fast body diode integration provides excellent hard-commutation ruggedness and an extra safety margin for designs demanding increased bus voltage. The device enables increased power density and outstanding light-load as well as full-load efficiency in industrial switch mode power supply (SMPS) applications.

Key characteristics include a maximum continuous drain current of 15 A, a maximum drain-source voltage of 700 V, and a maximum power dissipation of 98 W. It is designed to operate reliably within a temperature range of -55°C up to 150°C, supporting demanding industrial environments.

The MOSFET package is a through-hole TO-247 type with 3 pins, measuring 21.5 mm in height, 16.3 mm in length, and 5.3 mm in width. Its maximum drain-source resistance of 155 mΩ and typical gate charge of 36 nC at Vgs ensure efficient switching and low conduction losses. The forward voltage drop is about 1 V, optimizing power conduction efficiency.

This MOSFET is ideal for industrial power electronics, including server power modules, telecom infrastructure, solar energy systems, and EV charging stations where high efficiency and reliability are critical.

Supports maximum continuous drain current of 15 A for robust performance. Maximum drain-source voltage rating of 700 V for high-voltage applications. Constructed in a durable TO-247 package with 3 pins and through-hole mounting.

Maximum power dissipation up to 98 W for reliable heat management. Operates from -55°C to 150°C to support various industrial environments. Typical gate charge of 36 nC at Vgs enhances switching efficiency. Maximum gate-source voltage of 20 V ensures safe operation within limits.

Low maximum drain-source resistance of 155 mΩ helps minimize power loss. Forward voltage approximately 1 V improves conduction effectiveness. Compact dimensions of 21.5 mm x 16.3 mm x 5.3 mm for PCB integration. Explore more Infineon MOSFETs and semiconductor products on EnvMart for your industrial and electronic design needs.