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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS8884 |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 8.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 23mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 9.2nC |
| Maximum Gate Source Voltage Vgs | 20V |
onsemi FDS8884 is a PowerTrench Type N-Channel MOSFET engineered for surface mount applications requiring efficient switching and power handling up to 8.5 A continuous drain current and 30 V drain-source voltage. Its enhancement mode channel ensures high reliability and low conduction losses.
The 8-pin SOIC package measures 5 mm in length, 4 mm in width, and 1.5 mm in height, making it suitable for compact circuit boards. The device features a low maximum drain-source resistance of 23 mOhms which optimizes power efficiency during operation. Typical gate charge is 9.2 nC at designated gate-source voltage, supporting fast switching speeds for demanding electronics.
Operating temperature ranges from -55°C minimum to 150°C maximum, allowing its use in a variety of industrial, consumer electronics, and power management applications. The maximum power dissipation rating is 2.5 W, suitable for moderate power levels in compact circuitry.
This MOSFET does not comply with automotive standards or other certifications but is ideal for applications in industrial controls, power supplies, automotive electronics (non-automotive rated), and general electronic component assemblies. It is built on onsemi’s PowerTrench technology for optimized performance and durability.
Maximum continuous drain current of 8.5 A. Maximum drain-source voltage rating of 30 V. PowerTrench series for low resistance and efficiency. Compact SOIC 8-pin surface mount package. Low drain-source resistance of 23 mΩ.
Wide operating temperature from -55°C to 150°C. Typical gate charge 9.2 nC enables swift switching. Maximum gate-source voltage 20 V for stable operation. Ideal for general semiconductor and power management applications.
Not automotive standard compliant. Explore the full range of semiconductor and MOSFET components at EnvMart for your industrial, commercial, and electronic design needs.
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