onsemi PowerTrench Type N-Channel MOSFET 2.7 A 100 V Enhancement Mode 3-Pin SOT-23 FDN8601

onsemi FDN8601 PowerTrench Type N-Channel MOSFET is a robust semiconductor device designed for power switching, amplification, and control within electronic circuits. It features an enhancement mode channel with a maximum continuous drain current of 2.7 A and drain-source voltage rating of 100 V, making it suitable for medium power and voltage applications in industries such as consumer electronics, automotive electronics, and industrial control systems.

Encapsulated in a compact 3-pin SOT-23 surface mount package, the FDN8601 provides ease of integration on printed circuit boards with low profile and footprint. Its PowerTrench series technology enables low on-resistance of 183 mΩ, significantly reducing conduction losses and heat generation during operation. This MOSFET is capable of dissipating up to 1.5 W of power and is rated for operation across a wide temperature range from -55°C to 150°C, affording reliability in harsh environments.

The device’s typical gate charge of 3 nC promotes swift switching speeds, important for pulse and digital switching circuits. A maximum gate-source voltage of 20 V ensures protection against excessive voltage stress, enhancing device durability. Physical dimensions of approximately 1.4 mm length, 2.92 mm width, and 0.94 mm height facilitate compact designs without compromising thermal performance.

Applications for the onsemi FDN8601 include industrial machinery motor control, power regulators in electronic devices, automotive electronics systems, and consumer electronics circuits requiring efficient power management and switching. Its surface mount format supports high volume automated assembly in manufacturing settings.

Maximum continuous drain current of 2.7 A. Drain-source voltage rating of 100 V. PowerTrench N-Channel MOSFET series with enhancement mode channel. SOT-23 surface mount 3-pin package. Low on-resistance of 183 mΩ for efficient conduction.

Maximum power dissipation of 1.5 W. Wide operating temperature range from -55°C to 150°C. Typical gate charge 3 nC for fast switching. Maximum gate-source voltage of 20 V. Compact dimensions suitable for space constrained designs.

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