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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRF740APBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRF740A |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 400V |
| Maximum Drain Source Resistance Rds | 550mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 2V |
Vishay IRF740APBF is a high-voltage N-channel power MOSFET built for reliable switching in power electronic circuits. Featuring a maximum continuous drain current of 10 A and drain-source voltage of 400 V, this device operates efficiently in demanding industrial and commercial applications.
Housed in a durable TO-220AB package designed for through-hole mounting, it offers excellent thermal performance with a maximum power dissipation rating of 125 W, enabling it to handle elevated load conditions when coupled with suitable heat sinking.
Its enhancement mode operation and low Rds(on) of 550 mΩ contribute to reduced conduction losses, while the typical gate charge of 36 nC ensures optimized switching performance and manageable drive requirements. The device maintains functionality across a wide temperature range from -55 °C to 150 °C, making it suitable for harsh environments.
The forward voltage drop of 2 V is an important design consideration for conduction loss calculations, especially when used in synchronous switching or circuits relying on the body diode behavior.
This MOSFET complies with RoHS regulations, ensuring an environmentally friendly product that meets contemporary standards. Maximum continuous drain current of 10 A supports high power applications. Drain-source voltage rating of 400 V for high-voltage switching capability.
Enhancement mode N-channel MOSFET designed for efficient switching. Maximum power dissipation of 125 W enables handling of heavy loads. Low drain-source resistance of 550 mΩ minimizes conduction losses. Typical gate charge of 36 nC allows manageable gate drive requirements.
Operating temperature range from -55 °C to 150 °C suitable for demanding conditions. TO-220AB through-hole package allows easy mounting and heat dissipation. Forward voltage drop of 2 V included in design calculations. RoHS compliant for environmental safety.
Common applications include offline power supplies, motor-drive switching stages, inverter circuits, industrial switching regulators, and prototyping requiring through-hole components. The robust build and reliable ratings make Vishay IRF740APBF ideal for industrial, commercial, and electronic manufacturing use cases.
Explore Vishay components and semiconductor products in the Semiconductor category at EnvMart to source reliable and quality electronic parts for your projects.
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