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Vishay IRF740A Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740APBF

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 9.01mm
Length 10.41mm
Model IRF740APBF
Width 4.7mm
Mount Type Through Hole
Series IRF740A
Maximum Operating Temperature 150°C
Package Type TO-220AB
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 10A
Maximum Drain Source Voltage Vds 400V
Maximum Drain Source Resistance Rds 550mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 125W
Typical Gate Charge Qg @ Vgs 36nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 2V

Key Features

  • Maximum continuous drain current of 10 A supports high power applications.
  • Drain-source voltage rating of 400 V for high-voltage switching capability.
  • Enhancement mode N-channel MOSFET designed for efficient switching.
  • Maximum power dissipation of 125 W enables handling of heavy loads.
  • Low drain-source resistance of 550 mΩ minimizes conduction losses.
  • Typical gate charge of 36 nC allows manageable gate drive requirements.
  • Supports thermal operation from -55 °C up to 150 °C with proper cooling.
  • Robust TO-220AB through-hole package facilitates heat sinking and easy mounting.

Product Description

Vishay IRF740APBF is a high-voltage N-channel power MOSFET built for reliable switching in power electronic circuits. Featuring a maximum continuous drain current of 10 A and drain-source voltage of 400 V, this device operates efficiently in demanding industrial and commercial applications.

Housed in a durable TO-220AB package designed for through-hole mounting, it offers excellent thermal performance with a maximum power dissipation rating of 125 W, enabling it to handle elevated load conditions when coupled with suitable heat sinking.

Its enhancement mode operation and low Rds(on) of 550 mΩ contribute to reduced conduction losses, while the typical gate charge of 36 nC ensures optimized switching performance and manageable drive requirements. The device maintains functionality across a wide temperature range from -55 °C to 150 °C, making it suitable for harsh environments.

The forward voltage drop of 2 V is an important design consideration for conduction loss calculations, especially when used in synchronous switching or circuits relying on the body diode behavior.

This MOSFET complies with RoHS regulations, ensuring an environmentally friendly product that meets contemporary standards. Maximum continuous drain current of 10 A supports high power applications. Drain-source voltage rating of 400 V for high-voltage switching capability.

Enhancement mode N-channel MOSFET designed for efficient switching. Maximum power dissipation of 125 W enables handling of heavy loads. Low drain-source resistance of 550 mΩ minimizes conduction losses. Typical gate charge of 36 nC allows manageable gate drive requirements.

Operating temperature range from -55 °C to 150 °C suitable for demanding conditions. TO-220AB through-hole package allows easy mounting and heat dissipation. Forward voltage drop of 2 V included in design calculations. RoHS compliant for environmental safety.

Common applications include offline power supplies, motor-drive switching stages, inverter circuits, industrial switching regulators, and prototyping requiring through-hole components. The robust build and reliable ratings make Vishay IRF740APBF ideal for industrial, commercial, and electronic manufacturing use cases.

Explore Vishay components and semiconductor products in the Semiconductor category at EnvMart to source reliable and quality electronic parts for your projects.

Vishay IRF740A Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740APBF
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Frequently Asked Questions

The maximum continuous drain current of this model is 10 A, making it suitable for high power applications.

The drain-source voltage rating is 400 V, allowing for high-voltage switching capabilities.

It has a maximum power dissipation of 125 W, enabling it to handle heavy loads efficiently.

The low drain-source resistance is 550 mΩ, which helps minimize conduction losses during operation.

The typical gate charge is 36 nC, which allows for manageable gate drive requirements.

It operates within a temperature range of -55 °C to 150 °C, making it suitable for demanding conditions.

This model uses a TO-220AB package type, designed for through-hole mounting.

The forward voltage drop is 2 V, which is important for conduction loss calculations in various applications.

The dimensions are 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height.

This MOSFET complies with RoHS regulations, ensuring it meets contemporary environmental standards.

Common applications include offline power supplies, motor-drive switching stages, and inverter circuits.

The maximum gate-source voltage is 30 V, which is critical for ensuring proper operation of the MOSFET.

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