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onsemi FCP Type N-Channel Enhancement MOSFET 24 A 650 V 3-Pin TO-220 FCP125N65S3R0
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 16.3mm |
| Length | 10.67mm |
| Model | FCP125N65S3R0 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | FCP |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 24A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 125mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 181W |
| Typical Gate Charge Qg @ Vgs | 46nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
| Internal Gate Resistance | 0.5 Ω |
Key Features
- Operates with a maximum power dissipation of 181 W.
- Features a low gate charge of 46 nC for efficient switching.
- Designed with an internal gate resistance of 0.5 Ω for reliable performance.
- Typical forward voltage drop of 1.2 V ensures low conduction losses.
- Operating temperature range from -55°C to 150°C enables versatile applications.
- Utilizes charge balance technology to minimize conduction losses and improve switching.
- TO-220 package supports through-hole mounting for robust board integration.
- Ideal for computing, industrial, telecom, and LED lighting applications.
Product Description
onsemi FCP125N65S3R0 is a Type N-Channel Enhancement MOSFET designed for high voltage and current applications. This MOSFET supports a maximum continuous drain current of 24 A and a maximum drain-source voltage of 650 V, making it suitable for robust power management tasks.
The device is housed in a TO-220 package with 3 pins, facilitating effective heat dissipation and ease of mounting through holes.
Featuring SUPERFET III technology, the MOSFET employs charge balance super-junction construction that offers low on-resistance combined with low gate charge, enhancing switching efficiency and reducing conduction losses.
Key electrical characteristics include a typical gate charge of 46 nC at Vgs, an internal gate resistance of 0.5 Ω, and a forward voltage drop of 1.2 V.
It is engineered to operate reliably over a wide temperature range, from -55°C up to 150°C, enabling deployment in demanding industrial, computing, telecom, and LED lighting applications.
Operates at 24 A continuous drain current and 650 V drain-source voltage. Low gate charge improves switching efficiency and reduces EMI. Internal gate resistance ensures signal integrity during operation. Supports through-hole mounting with a durable TO-220 package.
Wide operating temperature range suitable for harsh environments. Employs super-junction technology for lower conduction loss. Optimized for computing and industrial power electronics. High power dissipation capacity of 181 W.
This MOSFET is produced in China under strict quality controls to meet industrial standards. Explore more power electronics components in the Semiconductor section on EnvMart to find complementary products for your projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 24 A.
It supports a maximum drain-source voltage of 650 V.
This MOSFET has a maximum power dissipation capacity of 181 W.
The typical gate charge at Vgs is 46 nC.
It features an internal gate resistance of 0.5 Ω.
The dimensions are 16.3 mm in height, 10.67 mm in length, and 4.7 mm in width.
It operates reliably over a temperature range from -55°C to 150°C.
It is suitable for computing, industrial, telecom, and LED lighting applications.
This model supports through-hole mounting due to its TO-220 package.
The typical forward voltage drop is 1.2 V, ensuring low conduction losses.
It is a Type N-Channel Enhancement MOSFET.
This MOSFET is produced in China under strict quality controls.
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