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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.4mm |
| Length | 10.67mm |
| Model | RFP50N06 |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | MegaFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 22mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 131W |
| Typical Gate Charge Qg @ Vgs | 125nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
onsemi RFP50N06 MegaFET Type N-Channel MOSFET is a power transistor designed to handle high current and voltage with reliable performance in industrial and electronic applications. It features an enhancement mode channel with a maximum continuous drain current of 50 A and a voltage rating of 60 V, packaged in a durable 3-pin TO-220 through-hole form factor that facilitates effective heat dissipation and mounting.
This device provides a maximum drain source resistance of just 22 milliohms, enabling low on-resistance switching to increase circuit efficiency. The maximum gate source voltage is 20 V, which allows for stable gate control, while the forward voltage drop is typically 1.5 V. It can dissipate up to 131 W of power and operates safely within a temperature range from -55°C up to 175°C, making it suited for varied industrial, automotive electronics (though it lacks automotive certification), and power management circuits.
The transistor dimensions are approximately 10.67 mm in length, 4.83 mm in width, and 9.4 mm in height. The typical gate charge of 125 nC permits fast switching suitable for power regulation and conversion uses. Its MegaFET technology is optimized for silicon utilization and performance, useful for industrial power supplies, motor control systems, and electronic devices requiring efficient MOSFET switching.
Suitable for through-hole mounting with a 3-pin TO-220 package. High current and voltage ratings for industrial use. Low drain source resistance to reduce heat and power loss. High maximum power dissipation supports heavy-duty applications.
Wide operating temperature range for reliability in harsh environments. Fast switching with typical gate charge of 125 nC. Compact size for efficient circuit integration. Enhancement mode N-Channel type for versatile transistor applications.
This robust MOSFET from onsemi is ideal for use in industrial electronics, power electronics, and manufacturing applications where efficient and reliable transistor performance is critical. Explore further product offerings within the Semiconductor MOSFET category on EnvMart for complementary components and technical solutions.
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