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onsemi MegaFET Type N-Channel MOSFET 50 A 60 V Enhancement 3-Pin TO-220 RFP50N06

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 9.4mm
Length 10.67mm
Model RFP50N06
Width 4.83mm
Mount Type Through Hole
Series MegaFET
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 50A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 22mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 131W
Typical Gate Charge Qg @ Vgs 125nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.5V

Key Features

  • Suitable for through-hole mounting with three pins for easy PCB integration.
  • Maximum drain source resistance of 22 milliohms ensures efficient current flow.
  • Handles maximum continuous drain current of 50 amperes.
  • Gate source voltage maximum rating is 20 volts for reliable switching.
  • Operating temperature range from -55 to 175 degrees Celsius for industrial use.
  • Maximum power dissipation rated at 131 watts supports high power applications.
  • Typical gate charge of 125 nanocoulombs at gate voltage.
  • Forward voltage drop of 1.5 volts for enhanced efficiency.

Product Description

onsemi RFP50N06 MegaFET Type N-Channel MOSFET is a power transistor designed to handle high current and voltage with reliable performance in industrial and electronic applications. It features an enhancement mode channel with a maximum continuous drain current of 50 A and a voltage rating of 60 V, packaged in a durable 3-pin TO-220 through-hole form factor that facilitates effective heat dissipation and mounting.

This device provides a maximum drain source resistance of just 22 milliohms, enabling low on-resistance switching to increase circuit efficiency. The maximum gate source voltage is 20 V, which allows for stable gate control, while the forward voltage drop is typically 1.5 V. It can dissipate up to 131 W of power and operates safely within a temperature range from -55°C up to 175°C, making it suited for varied industrial, automotive electronics (though it lacks automotive certification), and power management circuits.

The transistor dimensions are approximately 10.67 mm in length, 4.83 mm in width, and 9.4 mm in height. The typical gate charge of 125 nC permits fast switching suitable for power regulation and conversion uses. Its MegaFET technology is optimized for silicon utilization and performance, useful for industrial power supplies, motor control systems, and electronic devices requiring efficient MOSFET switching.

Suitable for through-hole mounting with a 3-pin TO-220 package. High current and voltage ratings for industrial use. Low drain source resistance to reduce heat and power loss. High maximum power dissipation supports heavy-duty applications.

Wide operating temperature range for reliability in harsh environments. Fast switching with typical gate charge of 125 nC. Compact size for efficient circuit integration. Enhancement mode N-Channel type for versatile transistor applications.

This robust MOSFET from onsemi is ideal for use in industrial electronics, power electronics, and manufacturing applications where efficient and reliable transistor performance is critical. Explore further product offerings within the Semiconductor MOSFET category on EnvMart for complementary components and technical solutions.

onsemi MegaFET Type N-Channel MOSFET 50 A 60 V Enhancement 3-Pin TO-220 RFP50N06
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Frequently Asked Questions

The maximum continuous drain current for this model is 50 amperes.

This MOSFET has a maximum drain source voltage rating of 60 volts.

It is packaged in a TO-220 form factor, suitable for through-hole mounting.

The maximum power dissipation rated for this MOSFET is 131 watts.

The typical gate charge at gate voltage is 125 nanocoulombs.

It operates within a temperature range from -55°C to 175°C.

The forward voltage drop is typically 1.5 volts.

The maximum gate source voltage is rated at 20 volts.

The dimensions are approximately 10.67 mm in length, 4.83 mm in width, and 9.4 mm in height.

This model features an enhancement mode N-channel type.

The maximum drain source resistance is 22 milliohms.

The country of origin for this MOSFET is India.

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