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onsemi PowerTrench Type N-Channel MOSFET, 51 A, 100 V Enhancement, 8-Pin PQFN FDMS86183
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 5mm |
| Model | FDMS86183 |
| Width | 5.85mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 51A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 12.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 63W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- The device operates with an enhancement channel mode ensuring efficient switching.
- Maximum power dissipation is 63 watts suitable for high-performance applications.
- Features a low maximum drain source resistance of 12.8 milliohms promoting low conduction losses.
- Designed for surface mount applications with robust thermal and electrical characteristics.
- Operates reliably across a wide temperature range from -55°C to 150°C.
- Typical gate charge is 15 nanocoulombs at the rated gate-source voltage.
- Maximum gate-source voltage is 20 volts ensuring device protection during operation.
- Compact dimensions include a length of 5 mm, width of 5.85 mm, and height of 1.05 mm.
Product Description
onsemi FDMS86183 PowerTrench Type N-Channel MOSFET is a high-performance semiconductor device featuring a maximum continuous drain current of 51 amperes and maximum drain-source voltage of 100 volts. Packaged in an 8-pin PQFN surface mount configuration, this MOSFET is designed for efficient power switching and dissipation up to 63 watts.
The device operates in enhancement mode offering low on-resistance of 12.8 milliohms, which reduces power losses during conduction. This makes it suitable for demanding industrial, automotive, and consumer electronic power applications where compact size and high efficiency are critical.
Designed to endure operating temperatures from -55°C up to 150°C, FDMS86183 offers reliability in harsh environments. The typical gate charge of 15 nC and maximum gate-source voltage rating of 20 V ensure controlled switching characteristics which enhances device protection and performance.
MECHANICAL DIMENSIONS: The MOSFET measures 5 mm in length, 5.85 mm in width, and 1.05 mm in height, fitting compact PCB footprints and enabling streamlined assembly processes.
APPLICATIONS include power management circuits in industrial electronics, automotive control units, and high-frequency switching regulators. Its low forward voltage of 1.2 V further improves overall circuit efficiency.
The device operates with an enhancement channel mode ensuring efficient switching. Maximum power dissipation is 63 watts suitable for high-performance applications. Features a low maximum drain source resistance of 12.8 milliohms promoting low conduction losses.
Designed for surface mount applications with robust thermal and electrical characteristics. Operates reliably across a wide temperature range from -55°C to 150°C. Typical gate charge is 15 nanocoulombs at the rated gate-source voltage.
Maximum gate-source voltage is 20 volts ensuring device protection during operation. Compact dimensions include a length of 5 mm, width of 5.85 mm, and height of 1.05 mm. Forward voltage drop is 1.2 volts supporting efficient power delivery.
Explore the extensive selection of MOSFET devices at EnvMart for industrial, laboratory, manufacturing, and electronic engineering applications. onsemi offers reliable power transistor solutions supporting diverse semiconductor requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 51 amperes.
This MOSFET has a maximum drain-source voltage rating of 100 volts.
The maximum power dissipation for this device is 63 watts.
The dimensions of this model are 5 mm in length, 5.85 mm in width, and 1.05 mm in height.
The typical gate charge for this MOSFET is 15 nanocoulombs at the rated gate-source voltage.
The maximum gate-source voltage for this model is 20 volts.
This device operates reliably across a temperature range from -55°C to 150°C.
It is designed for surface mount applications.
The maximum drain-source resistance for this model is 12.8 milliohms.
This device is suitable for power management circuits in industrial electronics, automotive control units, and high-frequency switching regulators.
The forward voltage drop for this model is 1.2 volts.
This model features a Type N channel.
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