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DiodesZetex N-Channel MOSFET 14.2A 20V, Enhancement, 6-Pin UDFN DMN2011UFDF-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 0.58mm
Length 2.05mm
Model DMN2011UFDF-7
Width 2.05mm
Mount Type Surface
Series DMN2011UFDF
Maximum Operating Temperature 150°C
Package Type UDFN
Minimum Operating Temperature -55°C
Pin Count 6
Automotive Standard AEC-Q101
Channel Type Type N
Maximum Continuous Drain Current Id 14.2A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 35mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.1W
Typical Gate Charge Qg @ Vgs 56nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 0.7V

Key Features

  • Type N-Channel MOSFET with enhancement mode operation.
  • Maximum continuous drain current of 14.2A ensures robust power handling.
  • Maximum drain-source voltage (Vds) of 20V for versatile circuit integration.
  • Compact 6-pin UDFN surface mount package ideal for space-constrained designs.
  • Maximum drain-source resistance (Rds) of 35mΩ enhances efficiency.
  • Maximum power dissipation of 2.1W supports reliable operation under load.
  • Operating temperature range from -55°C to 150°C for wide environmental compatibility.
  • Typical gate charge of 56nC enables fast switching performance.

Product Description

DiodesZetex DMN2011UFDF-7 N-Channel MOSFET is designed for advanced electronic systems requiring efficient and reliable switching. With a maximum continuous drain current of 14.2A and a maximum drain-source voltage of 20V, this enhancement mode MOSFET is well suited for power management, DC-DC conversion, and automotive circuits.

Type N-Channel MOSFET with enhancement mode operation. Maximum continuous drain current of 14.2A. Maximum drain-source voltage of 20V. Compact UDFN 6-pin package for surface mounting on PCBs. Low drain-source resistance of 35mΩ ensures energy efficiency.

Power dissipation up to 2.1W for durable performance. Wide operating temperature range from -55°C to 150°C. Typical gate charge of 56nC for rapid switching. Automotive standard AEC-Q101 compliant for high-reliability applications.

Its small footprint (2.05mm x 2.05mm x 0.58mm) enables integration in compact layouts. Ideal for use in portable devices, industrial equipment, and automotive systems, this MOSFET delivers performance and durability across varied applications.

The product is compatible with modern surface mount technology, facilitating easy assembly in high-volume manufacturing. Engineers favor it for efficient energy conversion, motor control, and load switching operations.

Explore the MOSFET category for more high-quality semiconductors from DiodesZetex and other leading brands at EnvMart.

DiodesZetex N-Channel MOSFET 14.2A 20V, Enhancement, 6-Pin UDFN DMN2011UFDF-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 14.2A.

This MOSFET has a maximum drain-source voltage (Vds) of 20V.

It comes in a compact UDFN 6-pin package suitable for surface mounting.

The operating temperature range for this MOSFET is from -55°C to 150°C.

The typical gate charge for this model is 56nC, which enables fast switching performance.

It has a maximum power dissipation rating of 2.1W.

The maximum drain-source resistance (Rds) is 35mΩ, enhancing efficiency.

Yes, it is compliant with the automotive standard AEC-Q101, ensuring high reliability for automotive applications.

The dimensions of this model are 2.05mm x 2.05mm x 0.58mm.

This model features an enhancement mode N-Channel configuration.

It is suitable for power management, DC-DC conversion, and automotive circuits.

The forward voltage (Vf) for this model is 0.7V.

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