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Infineon HEXFET N-Channel MOSFET 10A 100V Enhancement 8-Pin PQFN IRFH5210TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 0.9mm |
| Length | 5mm |
| Model | IRFH5210TRPBF |
| Width | 6mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 14.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 104W |
| Typical Gate Charge Qg @ Vgs | 40nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- HEXFET N-Channel enhancement mode for high-efficiency switching.
- Maximum continuous drain current of 10A for demanding applications.
- Supports up to 100V drain-source voltage for robust performance.
- Surface-mount PQFN (8-Pin) package for compact layout.
- Low Rds(on) of 14.9mΩ reduces conduction losses.
- Operates from -55°C to +150°C suitable for harsh environments.
- Maximum power dissipation up to 104W.
- 20V gate-source voltage rating for flexible circuit design.
Product Description
Infineon IRFH5210TRPBF HEXFET N-Channel MOSFET is engineered for high-efficiency power switching and energy management in industrial and electronic applications. Designed with enhancement mode operation, it enables precise control with a maximum continuous drain current of 10A and drain-source voltage up to 100V.
The surface-mount PQFN package with 8 pins allows for compact and reliable circuit integration, making it ideal for systems requiring space-saving board layouts. Its low drain-source resistance of 14.9mΩ minimizes power losses, helping system designers achieve optimum efficiency. With a maximum power dissipation of 104W, the MOSFET can handle high thermal loads without performance degradation.
Gate-source voltage capability extends to 20V, supporting versatile circuit designs in rapid switching and energy-sensitive electronics. The forward voltage specification of 1.3V and a typical gate charge of 40nC at Vgs further boost switching speed and reduce energy consumption, ensuring high responsiveness in PWM drivers, motor controllers, voltage regulation and converter applications.
Wide operating temperature range from -55°C to +150°C ensures reliable operation in harsh industrial environments, automotive subsystems, and demanding electronic platforms. The product's quality and performance align with Infineon's extensive HEXFET MOSFET family, recognized for advanced materials and proven performance in critical sectors.
HEXFET N-Channel enhancement mode for high-efficiency switching. Maximum continuous drain current of 10A for demanding applications. Supports up to 100V drain-source voltage for robust performance. Surface-mount PQFN (8-Pin) package for compact layout.
Low Rds(on) of 14.9mΩ reduces conduction losses. Operates from -55°C to +150°C suitable for harsh environments. Maximum power dissipation up to 104W. 20V gate-source voltage rating for flexible circuit design. Forward voltage of 1.3V.
Typical industrial use cases include power drives, DC-DC converters, battery management, switching regulators, and automotive systems. The MOSFET supports applications in manufacturing automation, laboratory instruments, power modules, and advanced circuit protection designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10A, making it suitable for demanding applications.
This MOSFET supports a maximum drain-source voltage of 100V, ensuring robust performance in high-voltage applications.
It operates within a temperature range of -55°C to +150°C, making it suitable for harsh environments.
The package type is PQFN (Plastic Quad Flat No-lead), which features 8 pins for surface mounting.
The low drain-source resistance (Rds(on)) is 14.9mΩ, which helps reduce conduction losses.
The maximum power dissipation for this model is up to 104W, allowing it to handle high thermal loads without performance degradation.
It has a maximum gate-source voltage rating of 20V, providing flexibility in circuit design.
The typical gate charge at Vgs is 40nC, which enhances switching speed and reduces energy consumption.
Typical applications include power drives, DC-DC converters, battery management systems, and automotive systems.
The forward voltage specification is 1.3V, contributing to its efficiency in switching applications.
The dimensions are 5mm in length, 6mm in width, and 0.9mm in height, making it compact for various layouts.
This model features an N-channel type, which is common for enhancement mode applications.
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