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Infineon IAUC90N10S5N062ATMA1 N-Channel MOSFET 120A, 40V, 0.7mΩ, Enhancement Mode, TDSON, 81W
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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IAUC90N10S5N062ATMA1 |
| Mount Type | Surface |
| Series | IAUC |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Infineon IAUC90N10S5N062ATMA1 N-Channel MOSFET is engineered for demanding power management applications, featuring a continuous drain current of up to 120A and a drain-source voltage of 40V. This device utilizes an enhancement-mode N-channel design, which ensures controlled and efficient switching suitable for automotive, industrial, and DC-DC conversion systems.
Packaged in an 8-pin TDSON, this MOSFET is optimized for surface-mount installation, improving both thermal management and electrical performance. With a low maximum drain-source resistance of 0.7mΩ, it markedly reduces conduction losses, helping boost energy efficiency in power assemblies.
Enhanced with a maximum power dissipation rating of 81W, it is capable of handling substantial electrical loads without compromising reliability. The typical gate charge is 80nC, allowing predictable and efficient switching behavior that is beneficial for high-current drive stages and battery protection circuits.
Catering to industrial and commercial installations, the IAUC90N10S5N062ATMA1 supports a broad operating temperature range (-55°C to 175°C), making it suitable for elevated temperature and challenging work environments. Its 20V gate tolerance provides flexibility in circuit designs and drive requirements.
Supports high current loads up to 120A for demanding automotive and industrial circuits. 40V maximum drain source voltage enables reliable mid-voltage power switching applications. Low Rds(on) value of 0.7mΩ minimizes conduction losses and improves efficiency.
Enhancement mode N-channel configuration ensures precise switching control. TDSON surface-mount package optimizes thermal management and board integration. 81W maximum power dissipation supports elevated power handling requirements.
Wide operating temperature range from -55°C to 175°C for tough environments. RoHS and AEC-Q101 compliant, suitable for automotive power modules.
This MOSFET meets stringent RoHS and AEC-Q101 qualifications, making it highly reliable for automotive-grade and environmentally compliant applications. It is commonly used in automotive power management modules, high-current motor drive stages, DC-DC converters, battery distribution units, and compact surface-mount power assemblies within industrial systems.
Explore MOSFETs and Infineon products for advanced power management and industrial applications on EnvMart.
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Infineon IAUC90N10S5N062ATMA1 N-Channel MOSFET 120A, 40V, 0.7mΩ, Enhancement Mode, TDSON, 81W
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Infineon IAUC90N10S5N062ATMA1 N-Channel MOSFET 120A, 40V, 0.7mΩ, Enhancement Mode, TDSON, 81W
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