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Infineon IAUC90N10S5N062ATMA1 N-Channel MOSFET 120A, 40V, 0.7mΩ, Enhancement Mode, TDSON, 81W

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IAUC90N10S5N062ATMA1
Mount Type Surface
Series IAUC
Maximum Operating Temperature 175°C
Package Type TDSON
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Automotive Standard AEC-Q101
Channel Type Type N
Maximum Continuous Drain Current Id 120A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 0.7mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.1V

Key Features

  • Supports high current loads up to 120A for demanding automotive and industrial circuits.
  • 40V maximum drain source voltage enables reliable mid-voltage power switching applications.
  • Low Rds(on) value of 0.7mΩ minimizes conduction losses and improves efficiency.
  • Enhancement mode N-channel configuration ensures precise switching control.
  • TDSON surface-mount package optimizes thermal management and board integration.
  • 81W maximum power dissipation supports elevated power handling requirements.
  • Wide operating temperature range from -55°C to 175°C for tough environments.
  • RoHS and AEC-Q101 compliant, suitable for automotive power modules.

Product Description

Infineon IAUC90N10S5N062ATMA1 N-Channel MOSFET is engineered for demanding power management applications, featuring a continuous drain current of up to 120A and a drain-source voltage of 40V. This device utilizes an enhancement-mode N-channel design, which ensures controlled and efficient switching suitable for automotive, industrial, and DC-DC conversion systems.

Packaged in an 8-pin TDSON, this MOSFET is optimized for surface-mount installation, improving both thermal management and electrical performance. With a low maximum drain-source resistance of 0.7mΩ, it markedly reduces conduction losses, helping boost energy efficiency in power assemblies.

Enhanced with a maximum power dissipation rating of 81W, it is capable of handling substantial electrical loads without compromising reliability. The typical gate charge is 80nC, allowing predictable and efficient switching behavior that is beneficial for high-current drive stages and battery protection circuits.

Catering to industrial and commercial installations, the IAUC90N10S5N062ATMA1 supports a broad operating temperature range (-55°C to 175°C), making it suitable for elevated temperature and challenging work environments. Its 20V gate tolerance provides flexibility in circuit designs and drive requirements.

Supports high current loads up to 120A for demanding automotive and industrial circuits. 40V maximum drain source voltage enables reliable mid-voltage power switching applications. Low Rds(on) value of 0.7mΩ minimizes conduction losses and improves efficiency.

Enhancement mode N-channel configuration ensures precise switching control. TDSON surface-mount package optimizes thermal management and board integration. 81W maximum power dissipation supports elevated power handling requirements.

Wide operating temperature range from -55°C to 175°C for tough environments. RoHS and AEC-Q101 compliant, suitable for automotive power modules.

This MOSFET meets stringent RoHS and AEC-Q101 qualifications, making it highly reliable for automotive-grade and environmentally compliant applications. It is commonly used in automotive power management modules, high-current motor drive stages, DC-DC converters, battery distribution units, and compact surface-mount power assemblies within industrial systems.

Explore MOSFETs and Infineon products for advanced power management and industrial applications on EnvMart.

Infineon IAUC90N10S5N062ATMA1 N-Channel MOSFET 120A, 40V, 0.7mΩ, Enhancement Mode, TDSON, 81W
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Frequently Asked Questions

The maximum continuous drain current of the IAUC90N10S5N062ATMA1 is 120A, making it suitable for high current applications.

This MOSFET has a maximum drain-source voltage of 40V, enabling reliable mid-voltage power switching applications.

The maximum drain-source resistance (Rds(on)) for this model is 0.7mΩ, which helps minimize conduction losses and improve efficiency.

The IAUC90N10S5N062ATMA1 is packaged in an 8-pin TDSON configuration, optimized for surface-mount installation.

It operates within a wide temperature range of -55°C to 175°C, making it suitable for challenging environments.

The typical gate charge (Qg) at Vgs is 80nC, allowing for predictable and efficient switching behavior.

This model is compliant with RoHS and AEC-Q101 standards, ensuring its suitability for automotive power modules and environmentally compliant applications.

The maximum power dissipation for the IAUC90N10S5N062ATMA1 is rated at 81W, supporting elevated power handling requirements.

It features an enhancement mode N-channel configuration, which ensures controlled and efficient switching.

The maximum gate-source voltage (Vgs) for this MOSFET is 20V, providing flexibility in circuit designs.

The forward voltage drop (Vf) for this model is 1.1V, which is relevant for its performance in various applications.

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