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DiodesZetex Type P-Channel MOSFET 4-Pin SOT-223, 4.3 A, 60 V Enhancement ZXMP6A17G
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | ZXMP6A17G |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | ZXMP6A17G |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q200, AEC-Q101, AEC-Q104, AEC-Q100 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.3A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.9W |
| Typical Gate Charge Qg @ Vgs | 17.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.95V |
Key Features
- This MOSFET features an enhancement mode channel suitable for surface mount applications.
- Designed for durability with a maximum operating temperature of 150°C and minimum operating temperature of -55°C.
- Boasts a maximum drain-source resistance of 190 milliohms for efficient conductivity.
- Supports a gate-source voltage range from -20 V to +20 V ensuring control flexibility.
- Has a typical gate charge of 17.7 nanocoulombs at gate-source voltage.
- Maximum power dissipation rating of 3.9 watts ensures reliability under load.
- Compact dimensions of 6.7 mm length, 3.7 mm width, and 1.8 mm height optimize PCB space.
- Complies with automotive standards including AEC-Q200, AEC-Q101, AEC-Q104, and AEC-Q100.
Product Description
DiodesZetex ZXMP6A17G is a type P-channel MOSFET designed for high-reliability surface-mount applications. Featuring a maximum continuous drain current of 4.3 A and a maximum drain-source voltage of 60 V, this enhancement-mode transistor ensures efficient switching and power handling. Its 4-pin SOT-223 package is compact with dimensions of 6.7 mm length, 3.7 mm width, and 1.8 mm height, ideal for space-constrained electronic assemblies.
Operating temperature ranges from -55°C to 150°C, making it suitable for demanding industrial and automotive environments. The MOSFET has a low maximum drain-source resistance of 190 milliohms, minimizing power loss and improving efficiency. The gate-source voltage tolerance from -20 V to +20 V provides control circuit flexibility, supported by a typical gate charge of 17.7 nC at rated gate voltage.
Its power dissipation is rated at 3.9 W, ensuring reliable operation across various load conditions. The device adheres to key automotive standards such as AEC-Q200, AEC-Q101, AEC-Q104, and AEC-Q100, confirming its suitability for use in automotive electronics and other rigorous applications.
The ZXMP6A17G MOSFET is ideal for industrial control systems, automotive electronics, consumer devices, and other electronic applications requiring a robust, reliable P-channel power switch. The surface mount type facilitates automated assembly and space-saving PCB layouts.
This MOSFET features an enhancement mode channel suitable for surface mount applications. Designed for durability with a maximum operating temperature of 150°C and minimum operating temperature of -55°C. Boasts a maximum drain-source resistance of 190 milliohms for efficient conductivity.
Supports a gate-source voltage range from -20 V to +20 V ensuring control flexibility. Has a typical gate charge of 17.7 nanocoulombs at gate-source voltage. Maximum power dissipation rating of 3.9 watts ensures reliability under load.
Compact dimensions of 6.7 mm length, 3.7 mm width, and 1.8 mm height optimize PCB space. Complies with automotive standards including AEC-Q200, AEC-Q101, AEC-Q104, and AEC-Q100. Explore the DiodesZetex range of MOSFETs and related semiconductor components at EnvMart for reliable performance in your design and manufacturing projects.
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Frequently Asked Questions
The maximum continuous drain current of this model is 4.3 A.
This MOSFET has a maximum drain-source voltage of 60 V.
The dimensions of the SOT-223 package are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height.
The maximum operating temperature is 150°C.
The minimum operating temperature is -55°C.
The maximum drain-source resistance is 190 milliohms.
It supports a gate-source voltage range from -20 V to +20 V.
The typical gate charge at rated gate voltage is 17.7 nanocoulombs.
The maximum power dissipation rating is 3.9 watts.
It complies with automotive standards AEC-Q200, AEC-Q101, AEC-Q104, and AEC-Q100.
This MOSFET features an enhancement mode channel.
The mount type for this model is surface mount.
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