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Infineon HEXFET N-Channel MOSFET 293A 60V Enhancement, TO-263, 8-Pin IRFS3006TRL7PP
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.65mm |
| Length | 10.67mm |
| Model | IRFS3006TRL7PP |
| Width | 4.83mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 293A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 2.1mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 375W |
| Typical Gate Charge Qg @ Vgs | 200nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Offers a continuous drain current of up to 293A for demanding power circuits.
- Supports a maximum drain source voltage of 60V, suitable for various voltage levels.
- Enhancement mode operation provides improved efficiency and safe switching characteristics.
- Integrated in a surface mount TO-263 package with 8 pins for easy PCB integration.
- Low drain source resistance of 2.1mΩ minimizes conduction losses.
- Accommodates a gate source voltage up to 20V for flexible control architectures.
- Operates efficiently within a temperature range of -55°C to 175°C.
- HEXFET series enables optimal system thermal and layout design for industrial use.
Product Description
Infineon IRFS3006TRL7PP HEXFET N-Channel MOSFET is engineered to deliver high-current handling with robust reliability and efficiency. Combining a continuous drain current of 293A and a maximum drain source voltage of 60V, this enhancement mode MOSFET is well-suited to demanding power supply, motor drive, and switching converter applications.
The IRFS3006TRL7PP features a surface-mount TO-263 package with an 8-pin configuration, optimized for automated assembly processes and high-density PCB layout. Its low drain source resistance of just 2.1mΩ ensures minimal conduction loss, supporting high-efficiency operations in industrial electronic circuits.
Gate-source voltage tolerance of up to 20V allows integration into a broad array of control systems, and the typical gate charge of 200nC enables fast switching capability. The maximum power dissipation of 375W ensures stable performance even under heavy load conditions, while its operational temperature range from -55°C to 175°C makes it suitable for environments with extreme thermal demands.
The HEXFET series from Infineon is recognized for benchmark resistance profiles that drive down energy loss and enhance overall system efficiency. This MOSFET's enhancement mode offers safe and controllable switching, improving device longevity and operational security.
Continuous drain current rated at 293A meets high-power requirements for modern industrial and commercial systems. Ideal for switching power supplies, motor controllers, converters and battery management applications. Low Rds(on) value maximizes power density and minimizes heat generation in circuit boards.
TO-263 package streamlines surface mounting and automated assembly workflows. Suitable for manufacturing, energy infrastructure, automotive electronics, and advanced industrial control.
Designers benefit from the HEXFET series’ adaptability in both surface mount and leaded package types, addressing diverse board layouts and thermal management. The Infineon portfolio further includes CoolMOS, OptiMOS, and StrongIRFET MOSFET families, with quality standards supporting best-in-class performance and protection features.
Explore more Infineon HEXFET MOSFETs and discover solutions for your industrial, laboratory, and electronics applications on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 293A, making it suitable for high-power applications.
It supports a maximum drain-source voltage of 60V, allowing it to work with various voltage levels in power circuits.
This MOSFET is housed in a TO-263 package with 8 pins, optimized for surface mounting and automated assembly.
It operates efficiently within a temperature range of -55°C to 175°C, suitable for extreme thermal environments.
The maximum power dissipation for this unit is 375W, ensuring stable performance under heavy load conditions.
The typical gate charge for this model is 200nC, which enables fast switching capabilities.
It has a low drain-source resistance of 2.1mΩ, which minimizes conduction losses and enhances efficiency.
This model features an N-channel configuration, which is common for enhancement mode MOSFETs.
It can accommodate a maximum gate-source voltage of 20V, providing flexibility in control architectures.
This MOSFET is well-suited for power supply, motor drive, and switching converter applications in industrial settings.
The dimensions of this MOSFET are 10.67mm in length, 4.83mm in width, and 9.65mm in height.
It belongs to the HEXFET series from Infineon, known for its efficient operation and low energy loss.
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