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Infineon DirectFET HEXFET Type N-Channel MOSFET 86A, 60V, Surface Mount, 4-Pin MN IRF6648TRPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 0.5mm
Length 6.35mm
Model IRF6648TRPBF
Width 5.05mm
Mount Type Surface
Series DirectFET, HEXFET
Maximum Operating Temperature 150°C
Package Type MN
Minimum Operating Temperature -40°C
Pin Count 4
Channel Type Type N
Maximum Continuous Drain Current Id 86A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 7mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 89W
Typical Gate Charge Qg @ Vgs 36nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.3V

Key Features

  • Type N-Channel MOSFET with 86 A maximum continuous drain current.
  • Supports a maximum drain source voltage of 60 V for broad application compatibility.
  • DirectFET HEXFET MN package ensures dual-sided cooling and compact profile.
  • Surface mount and 4-pin configuration optimized for automated PCB assembly.
  • 7 mΩ maximum drain source resistance (Rds) for efficient energy conduction.
  • Enhancement mode operation guarantees low standby losses.
  • Robust maximum power dissipation of 89 W supports demanding loads.
  • Wide operating temperature range from -40°C to 150°C for industrial reliability.

Product Description

Infineon IRF6648TRPBF DirectFET HEXFET Type N-Channel MOSFET is a high-performance surface-mount transistor engineered to deliver reliable operation in advanced power switching applications. Featuring an industry-best low on-resistance of only 7 mΩ and efficient dual-sided cooling, it is well-suited for energy conversion, power management, and dense electronics system designs.

Type N-Channel MOSFET with 60 V drain source voltage ensures compatibility with a range of industrial and electronic circuits. Maximum continuous drain current of 86 A enables high load-carrying capacity. DirectFET HEXFET MN package delivers significant improvements in power density, cost, and reliability due to its compact size and enhanced thermal management.

Surface mount technology and 4-pin configuration support automated manufacturing processes for higher assembly efficiency. An enhancement-channel mode minimizes idle losses and optimizes switching performance. With a maximum power dissipation of 89 W, it is reliable for demanding operational environments.

Operating temperature specification from -40°C to 150°C secures industrial-grade durability over a broad range of conditions. Ideal for use in industrial automation, power supply units, motor controllers, lighting electronics, and more.

Low profile height (0.5 mm) makes this device optimal for compact PCB designs, supporting high power density requirements. Not qualified to automotive standards, making it better suited for industrial, commercial, and laboratory applications.

The DirectFET power package brings unmatched conduction efficiency, reducing energy losses and shrinking design footprints. Infineon's extended portfolio of MOSFETs delivers consistent performance, enhanced protection, and high quality for advanced electronics.

Typical applications include industrial power supply, laboratory instrumentation, commercial switching circuits, and densely packed PCB design challenges where reliable surface-mount transistors are required.

Browse more MOSFETs in the EnvMart Semiconductor category and explore Infineon's full selection for top-tier professional use.

Infineon DirectFET HEXFET Type N-Channel MOSFET 86A, 60V, Surface Mount, 4-Pin MN IRF6648TRPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 86 A.

This MOSFET supports a maximum drain-source voltage of 60 V.

The package type of this model is MN, designed for surface mount applications.

The height of this model is 0.5 mm.

The maximum power dissipation for this MOSFET is 89 W.

This MOSFET operates within a temperature range of -40°C to 150°C.

The maximum drain-source resistance (Rds) is 7 mΩ.

The typical gate charge (Qg) at Vgs is 36 nC.

This model features a Type N channel.

The pin count for this MOSFET is 4 pins.

This model is suitable for applications in industrial power supply, motor controllers, and commercial switching circuits.

The maximum gate-source voltage (Vgs) for this model is 20 V.

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