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Infineon CoolSiC N-Channel MOSFET 47A 650V Enhancement 3-Pin TO-247 IMW65R027M1HXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IMW65R027M1HXKSA1 |
| Mount Type | Through Hole |
| Series | CoolSiC |
| Package Type | TO-247 |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 47A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 34mΩ |
| Channel Mode | Enhancement |
Key Features
- Advanced silicon carbide (SiC) MOSFET technology for enhanced switching efficiency.
- Features type N-channel with enhancement mode operation.
- 3-pin TO-247 package enables robust through-hole mounting.
- Maximum continuous drain current of 47A supports high power applications.
- Withstands up to 650V drain-source voltage for demanding environments.
- Low drain-source resistance of 34mΩ ensures minimal conduction losses.
- Superior gate oxide reliability for consistent performance.
- CoolSiC series technology provides high switching speed and thermal stability.
Product Description
The Infineon IMW65R027M1HXKSA1 is a high-performance CoolSiC N-Channel MOSFET designed for optimum efficiency and reliability in demanding power electronic applications. Featuring a maximum continuous drain current of 47A and a drain-source voltage rating of up to 650V, this enhancement-mode MOSFET is well-suited for use in industrial, laboratory, and advanced manufacturing sectors.
This device leverages state-of-the-art silicon carbide (SiC) trench semiconductor technology, delivering both minimal switching and conduction losses, as well as superior robustness. The 3-pin TO-247 package with through-hole mounting allows for straightforward integration into a wide range of power systems. The CoolSiC series is renowned for its ability to combine high current handling, high voltage tolerance, and operational reliability, making it a favorite in power conversion, inverter, and switching applications.
Key technical advantages include low output capacitance, optimal switching behavior even at higher current levels, improved thermal characteristics, and increased avalanche capability. The device is engineered for use with standard MOSFET gate drivers, streamlining system design and development. With a low drain-source on-resistance of just 34mΩ, the IMW65R027M1HXKSA1 reduces power losses substantially in both continuous and repetitive switching scenarios.
Advanced SiC MOSFET for energy-efficient, high-power designs. Handles up to 47A continuous drain current and 650V voltage. 3-pin TO-247 through-hole package for solid assembly and heat dissipation. 34mΩ Rds(on) lowers conduction losses and boosts system efficiency.
Enhanced gate oxide reliability and robust avalanche performance. Thermal stability ideal for systems with high switching cycles. Standard drive compatibility aids design flexibility and integration. Used extensively in industrial inverters, power supplies, renewables, and precision instrumentation.
Suitable for systems prioritizing switching speed, energy efficiency, and longevity. Packaged for quality and reliability from Infineon's CoolSiC MOSFET family. Typical applications include industrial automation equipment, motor drives, SMPS, UPS systems, solar inverters, and advanced power factor correction circuits.
Explore more Infineon CoolSiC series MOSFETs and related power semiconductors in the EnvMart Electronics & Electricals - Semiconductor > MOSFET section for high-efficiency designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 47A.
It can withstand a maximum drain-source voltage of 650V.
The drain-source on-resistance (Rds(on)) is 34mΩ, which helps minimize conduction losses.
This model comes in a 3-pin TO-247 package suitable for through-hole mounting.
It features an N-channel type with enhancement mode operation.
This device is suitable for applications such as industrial automation, motor drives, and solar inverters.
The CoolSiC series technology provides high switching speed and thermal stability, making it ideal for demanding power applications.
Yes, it is engineered for use with standard MOSFET gate drivers, facilitating easier system design.
It has improved thermal characteristics, which enhance its performance in high switching cycles.
The country of origin for this MOSFET is India.
Key advantages include minimal switching and conduction losses, superior gate oxide reliability, and robust avalanche capability.
Low output capacitance contributes to optimal switching behavior, especially at higher current levels, enhancing overall efficiency.
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