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onsemi N-Channel MOSFET, 107A, 40V, Enhancement Mode, 8-Pin WDFN Surface Mount NTTFS5C453NLTAG

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onsemi N-Channel MOSFET, 107A, 40V, Enhancement Mode, 8-Pin WDFN Surface Mount NTTFS5C453NLTAG

Name: onsemi N-Channel MOSFET, 107A, 40V, Enhancement Mode, 8-Pin WDFN Surface Mount NTTFS5C453NLTAG
Brand: onsemi
SKU: 90664
Price: 0.52 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	Malaysia
Brand	onsemi
Height	0.75mm
Length	3.15mm
Model	NTTFS5C453NLTAG
Width	3.15mm
Mount Type	Surface
Maximum Operating Temperature	175°C
Package Type	WDFN
Minimum Operating Temperature	-55°C
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	Type N
Maximum Continuous Drain Current Id	107A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	4.8mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	68W
Typical Gate Charge Qg @ Vgs	35nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	-0.95V

Key Features

N-channel enhancement mode MOSFET suitable for power and automotive applications.
Maximum continuous drain current of 107A enables robust handling of demanding loads.
Rated for a maximum drain-source voltage of 40V, supporting medium voltage switching tasks.
Low drain-source resistance of 4.8mΩ provides efficient conduction and reduced heat buildup.
Surface-mount design in an 8-pin WDFN package conserves PCB space and supports automated mounting.
Gate-source voltage up to 20V allows flexible driving from microcontrollers or gate drivers.
Wide operating temperature range from -55°C to 175°C for reliability in harsh environments.
Compliant with AEC-Q101 automotive standard for quality and endurance.

Product Description

onsemi NTTFS5C453NLTAG N-Channel MOSFET is designed for high-efficiency power switching and amplification, making it ideal for demanding industrial, automotive, and commercial applications. The device features a robust maximum drain current of 107A and supports up to 40V drain-source voltage, enabling reliable operation in a wide range of power circuits.

Its enhancement mode N-channel architecture ensures efficient performance with fast switching speeds, and the low Rds(on) of 4.8mΩ reduces conduction losses, improving thermal management for sustained operations. The MOSFET's compact 8-pin WDFN package enables surface mounting, streamlining assembly processes and saving valuable PCB space for high-density designs.

With a wide gate-source voltage range of up to 20V and a typical gate charge of 35nC, the device is easily driven by microcontrollers, gate drivers, or logic-level devices. Its excellent thermal characteristics, including a maximum power dissipation of 68W and an operating range from -55°C to 175°C, ensure durability in environments subject to extreme temperatures.

N-channel enhancement-type MOSFET for high-side and low-side switching applications. Maximum drain current 107A; maximum drain-source voltage 40V. Low Rds(on) for reduced power losses and improved efficiency. Surface-mount 8-pin WDFN package for space-saving PCB layouts.

Supports automated manufacturing processes. Wide operating temperature range for use in industrial and automotive systems. Meets the AEC-Q101 automotive standard for enhanced reliability.

This MOSFET is well-suited for motor control, power distribution, battery management, switching regulators, and electronic load driving in electronics manufacturing, laboratory prototyping, and automotive environments. Engineers benefit from its compact footprint and strong current-handling capability, making the NTTFS5C453NLTAG an essential building block for modern electronic circuits.

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