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Infineon CoolMOS Type N-Channel MOSFET 31.2A 650V Enhancement 3-Pin TO-263 IPB65R190C7ATMA2
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPB65R190C7ATMA2 |
| Mount Type | Surface |
| Series | CoolMOS |
| Package Type | TO-263 |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 31.2A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 110mΩ |
| Channel Mode | Enhancement |
Key Features
- Designed for high voltage power applications.
- Reliable N-channel operation with enhancement mode.
- Maximum drain current of 31.2A supports heavy-duty circuits.
- 650V maximum drain source voltage suitable for industrial and power switching.
- Low on-resistance of 110mΩ for efficient performance.
- Three terminals, TO-263 package for surface mounting.
- CoolMOS series utilizes super junction technology pioneered by Infineon.
- Ideal for power supplies, motor control, and switching applications.
Product Description
Infineon IPB65R190C7ATMA2 CoolMOS Type N-Channel MOSFET is a high-performance semiconductor designed for applications requiring robust voltage and current handling. This device supports a maximum continuous drain current of 31.2A and a drain-source voltage of up to 650V, making it suitable for demanding industrial, power conversion, and switching tasks.
Featuring enhancement mode operation and low on-resistance of 110mΩ, the IPB65R190C7ATMA2 enables efficient power management and minimizes energy loss. Its three-pin TO-263 surface-mount package ensures compatibility with modern assembly processes.
Designed for high voltage power applications. Reliable N-channel operation with enhancement mode. Maximum drain current of 31.2A supports heavy-duty circuits. 650V maximum drain source voltage suitable for industrial and power switching.
Low on-resistance of 110mΩ for efficient performance. Three terminals, TO-263 package for surface mounting. CoolMOS series utilizes super junction technology pioneered by Infineon. Ideal for power supplies, motor control, and switching applications.
As part of Infineon's CoolMOS series, this MOSFET leverages super junction (SJ) technology to deliver enhanced efficiency and performance. It is widely used in industrial automation, power supply modules, motor drive circuits, and energy conversion systems.
Typical applications include industrial power supplies, switch-mode power supplies, motor controllers, and renewable energy systems where reliability and thermal stability are critical.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon IPB65R190C7ATMA2 is 31.2A, making it suitable for heavy-duty circuits.
This model supports a maximum drain-source voltage of 650V, suitable for industrial and power switching applications.
The on-resistance of this MOSFET is 110mΩ, which contributes to its efficient performance in power management.
The Infineon IPB65R190C7ATMA2 comes in a TO-263 package type, designed for surface mounting.
This device is a Type N-channel MOSFET, utilizing enhancement mode operation.
This model is ideal for applications such as industrial power supplies, motor control, and switching applications.
This MOSFET features a three-pin configuration, facilitating its integration into various circuits.
The Infineon IPB65R190C7ATMA2 is part of the CoolMOS series, which leverages super junction technology for enhanced efficiency.
The Infineon IPB65R190C7ATMA2 is manufactured in India.
The low on-resistance of 110mΩ in this MOSFET enables efficient power management and reduces energy loss during operation.
The CoolMOS series utilizes super junction technology, which enhances performance and efficiency in power applications.
Typical applications include switch-mode power supplies, motor controllers, and renewable energy systems where reliability is critical.
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