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Infineon 600V CoolMOS P7 N-Channel MOSFET, 18A, TO-247 Package IPW60R180P7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.1mm |
| Length | 16.13mm |
| Model | IPW60R180P7XKSA1 |
| Width | 5.21mm |
| Mount Type | Through Hole |
| Series | 600V CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 180mΩ |
| Maximum Power Dissipation Pd | 72W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.9V |
Key Features
- Operates at a maximum drain current of 18A and drain source voltage of 600V.
- TO-247 package offers robust mounting for industrial and electronic power circuits.
- Features super junction technology for reduced switching and conduction losses.
- Suitable for hard and soft switching applications, including PFC and LLC topologies.
- Typical gate charge is 25nC, with a maximum gate source voltage of 20V.
- Maximum power dissipation is 72W, allowing reliable thermal performance.
- Commutation ruggedness enables high reliability in demanding environments.
- Excellent ESD robustness > 2kV (HBM) ensures safe handling during installation.
Product Description
Infineon IPW60R180P7XKSA1 600V CoolMOS P7 N-Channel MOSFET is a high-performance power device designed for a range of demanding applications. The device operates with a maximum drain current of 18A and a maximum drain source voltage of 600V, making it ideal for power conversion and high-voltage switching tasks in industrial and commercial systems.
This MOSFET leverages Infineon's CoolMOS P7 super junction technology, enabling reduced switching and conduction losses, which is critical for achieving enhanced efficiency and minimizing heat generation during operation. The device comes in a TO-247 package, suited for robust through-hole mounting, ensuring reliable operation in environments where mechanical stability is essential.
The device is suitable for hard and soft switching applications, including Power Factor Correction (PFC) circuits and LLC resonant converter topologies, due to its outstanding commutation ruggedness. With a typical gate charge of 25nC and a maximum gate source voltage of 20V, the IPW60R180P7XKSA1 supports fast switching speeds and flexible drive compatibility in complex electronic assemblies.
Operates at a maximum drain current of 18A and drain source voltage of 600V. TO-247 package ensures mechanical and thermal robustness in power systems. Super junction technology allows for higher efficiency and lower heat production.
Suitable for advanced switching circuits in industrial and energy applications. Maximum power dissipation is 72W, supporting thermal and operational reliability. Excellent ESD protection (>2kV HBM) for safe and reliable device handling.
Supports a wide range of operating temperatures, from -55°C to 150°C. Three-pin configuration allows easy integration into PCB layouts and power circuits.
With compact dimensions (Length: 16.13mm, Width: 5.21mm, Height: 21.1mm) and robust electrical characteristics, this MOSFET is well-suited for use in industrial power supplies, renewable energy systems, commercial switching power supplies, and other demanding applications requiring high voltage and current performance.
Industrial, laboratory, energy, and commercial users can rely on the Infineon IPW60R180P7XKSA1 CoolMOS P7 MOSFET for high-efficiency, reliable power conversion and switching circuits. Browse the full range of Infineon power semiconductor devices on EnvMart.
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Frequently Asked Questions
The maximum drain current of the Infineon IPW60R180P7XKSA1 is 18A.
This model operates at a maximum drain source voltage of 600V.
The Infineon IPW60R180P7XKSA1 comes in a TO-247 package, which is suitable for through-hole mounting.
The typical gate charge for this MOSFET is 25nC.
The maximum power dissipation for the Infineon IPW60R180P7XKSA1 is 72W.
The dimensions of this MOSFET are 16.13mm in length, 5.21mm in width, and 21.1mm in height.
The maximum gate source voltage for this model is 20V.
This MOSFET operates within a temperature range of -55°C to 150°C.
This model is suitable for hard and soft switching applications, including Power Factor Correction (PFC) and LLC resonant converter topologies.
The channel type of the Infineon IPW60R180P7XKSA1 is N-channel.
The device has excellent ESD robustness greater than 2kV (HBM), ensuring safe handling during installation.
This MOSFET has a three-pin configuration, allowing for easy integration into PCB layouts.
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