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Vishay E Series N-Channel MOSFET, 29 A, 600 V Enhancement Mode, 3-Pin TO-220 SiHF30N60E-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 16.12mm |
| Length | 10.63mm |
| Model | SiHF30N60E-GE3 |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | E |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 29A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 125mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 37W |
| Typical Gate Charge Qg @ Vgs | 85nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- High maximum continuous drain current of 29 A ensures robust performance.
- Maximum drain-source voltage rating of 600 V ideal for high-voltage applications.
- Low on-resistance with Rds(on) of 125 mΩ reduces conduction losses.
- Maximum power dissipation of 37 W supports efficient heat management.
- Low typical gate charge of 85 nC facilitates fast switching.
- Wide operating temperature range from -55°C to 150°C enhances reliability.
- Through-hole mount type with standard TO-220 package for easy integration.
- Maximum gate-source voltage of ±20 V for circuit protection.
Product Description
Vishay SiHF30N60E-GE3 is a high-performance E Series N-Channel MOSFET designed for robust power electronic applications requiring 29 amp maximum continuous drain current and 600 volts drain-source voltage. Encapsulated in a 3-pin TO-220 through-hole package, it provides ease of installation and reliable mechanical stability.
This MOSFET features low figure of merit (FOM) with a minimal RDS(on) resistance of 125 milliohms, reducing conduction losses and enhancing energy efficiency. The low typical gate charge (85 nC at Vgs) allows rapid switching, making it ideal for high-frequency converters.
The device operates over a broad temperature range from -55°C to 150°C, ensuring dependable performance in industrial, server, telecom power supplies, LED lighting, and switched-mode power supplies (SMPS) applications. The maximum power dissipation rating of 37 W permits effective thermal management under demanding conditions.
Key attributes include a maximum gate-source voltage of ±20 V for reliability, and compact physical dimensions (16.12 mm height, 10.63 mm length, and 4.83 mm width), facilitating integration in densely packed circuit boards.
High current capacity suitable for power switching and management tasks. Fast switching with ultra-low gate charge reduces switching losses. Robust voltage and temperature ratings support harsh operating environments. Through-hole TO-220 package provides mechanical durability and enhanced heat dissipation.
Common applications include servers, telecom power supplies, LED drivers, flyback converters, PFC circuits, and SMPS systems. Choose Vishay E Series MOSFETs for reliable, efficient power electronics solutions. Explore more products in the Power MOSFET category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 29 A.
It has a maximum drain-source voltage rating of 600 V, making it suitable for high-voltage applications.
The on-resistance (Rds(on)) is 125 mΩ, which helps reduce conduction losses.
The typical gate charge is 85 nC, facilitating fast switching capabilities.
It operates over a wide temperature range from -55°C to 150°C, enhancing its reliability in various conditions.
This model is encapsulated in a 3-pin TO-220 through-hole package, which allows for easy integration.
The maximum power dissipation rating is 37 W, supporting effective thermal management.
The maximum gate-source voltage is ±20 V, providing circuit protection.
The dimensions are 16.12 mm in height, 10.63 mm in length, and 4.83 mm in width.
The channel type is N-channel, which is typical for enhancement mode MOSFETs.
The forward voltage of this MOSFET is 1.3 V.
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