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Vishay E Series N-Channel MOSFET, 29 A, 600 V Enhancement Mode, 3-Pin TO-220 SiHF30N60E-GE3

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Vishay E Series N-Channel MOSFET, 29 A, 600 V Enhancement Mode, 3-Pin TO-220 SiHF30N60E-GE3

Name: Vishay E Series N-Channel MOSFET, 29 A, 600 V Enhancement Mode, 3-Pin TO-220 SiHF30N60E-GE3
Brand: Vishay
SKU: 136111

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Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin	China
Brand	Vishay
Height	16.12mm
Length	10.63mm
Model	SiHF30N60E-GE3
Width	4.83mm
Mount Type	Through Hole
Series	E
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	29A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	125mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	37W
Typical Gate Charge Qg @ Vgs	85nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.3V

Key Features

High maximum continuous drain current of 29 A ensures robust performance.
Maximum drain-source voltage rating of 600 V ideal for high-voltage applications.
Low on-resistance with Rds(on) of 125 mΩ reduces conduction losses.
Maximum power dissipation of 37 W supports efficient heat management.
Low typical gate charge of 85 nC facilitates fast switching.
Wide operating temperature range from -55°C to 150°C enhances reliability.
Through-hole mount type with standard TO-220 package for easy integration.
Maximum gate-source voltage of ±20 V for circuit protection.

Product Description

Vishay SiHF30N60E-GE3 is a high-performance E Series N-Channel MOSFET designed for robust power electronic applications requiring 29 amp maximum continuous drain current and 600 volts drain-source voltage. Encapsulated in a 3-pin TO-220 through-hole package, it provides ease of installation and reliable mechanical stability.

This MOSFET features low figure of merit (FOM) with a minimal RDS(on) resistance of 125 milliohms, reducing conduction losses and enhancing energy efficiency. The low typical gate charge (85 nC at Vgs) allows rapid switching, making it ideal for high-frequency converters.

The device operates over a broad temperature range from -55°C to 150°C, ensuring dependable performance in industrial, server, telecom power supplies, LED lighting, and switched-mode power supplies (SMPS) applications. The maximum power dissipation rating of 37 W permits effective thermal management under demanding conditions.

Key attributes include a maximum gate-source voltage of ±20 V for reliability, and compact physical dimensions (16.12 mm height, 10.63 mm length, and 4.83 mm width), facilitating integration in densely packed circuit boards.

High current capacity suitable for power switching and management tasks. Fast switching with ultra-low gate charge reduces switching losses. Robust voltage and temperature ratings support harsh operating environments. Through-hole TO-220 package provides mechanical durability and enhanced heat dissipation.

Common applications include servers, telecom power supplies, LED drivers, flyback converters, PFC circuits, and SMPS systems. Choose Vishay E Series MOSFETs for reliable, efficient power electronics solutions. Explore more products in the Power MOSFET category at EnvMart.