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IXYS HiperFET Polar N-Channel MOSFET, 115A, 200V, 4-Pin SOT-227, Enhancement Mode IXFN140N20P
Specifications
| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 9.6mm |
| Length | 38.23mm |
| Model | IXFN140N20P |
| Width | 25.42mm |
| Mount Type | Panel |
| Series | HiperFET, Polar |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-227 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 115A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 18mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 680W |
| Typical Gate Charge Qg @ Vgs | 240nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
Key Features
- High continuous drain current rating of 115A for demanding power applications.
- Handles maximum drain-source voltages up to 200V for enhanced robustness.
- Rugged SOT-227 panel mount package ensures reliable thermal dissipation.
- Low 18mΩ maximum drain-source resistance improves efficiency.
- Wide operating temperature range from -55°C to 175°C offers durability.
- 4-pin architecture promotes simplified power circuit design.
- Enhancement mode N-channel technology allows fast and controlled switching.
- Delivers up to 680W maximum power dissipation for industrial requirements.
Product Description
The IXYS IXFN140N20P is a high-performance HiperFET Polar N-channel MOSFET engineered for demanding industrial and power electronics applications. This device is designed to handle a maximum continuous drain current of 115A and supports a substantial drain-source voltage of up to 200V, making it ideal for use in power conversion, motor drives, and industrial switching circuits.
Housed in a rugged 4-pin SOT-227 package, this panel-mount MOSFET ensures reliable operation and effective heat dissipation, critical for high-power environments. Its low maximum drain-source on-resistance of 18 milliohms reduces power losses during operation, improving system efficiency and longevity. The IXFN140N20P operates in enhancement mode, offering rapid switching characteristics and precise gate control for advanced power management.
The device features a typical gate charge of 240nC at nominal gate drive voltages and tolerates a maximum gate-source voltage of 20V, providing compatibility with a wide range of gate drivers and controllers. It also delivers a robust maximum power dissipation of 680W, further supporting high-current, high-voltage uses. The operating temperature range from -55°C to 175°C allows for usage in harsh industrial environments, ensuring reliable performance despite thermal fluctuations.
With a compact footprint - measuring 38.23mm in length, 25.42mm in width, and 9.6mm in height - the IXFN140N20P is suitable for space-constrained designs requiring high-density integration. The inclusion of a fast intrinsic diode (HiPerFET technology) enhances system protection and switching speed, contributing to its suitability for advanced electronics, energy storage systems, power supplies, and inverter circuits.
Typical applications for the IXYS IXFN140N20P include industrial motor drives, high-efficiency inverters, power conversion units, and robust switching devices in renewable energy installations and automation systems. Its design enables engineers and OEMs to develop systems with higher power density, reliability, and energy efficiency.
For engineers seeking a reliable N-channel MOSFET solution for high-current, high-voltage applications, the IXYS IXFN140N20P offers a strong balance of performance, thermal management, and integration flexibility for manufacturing, industrial, and energy markets.
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Frequently Asked Questions
The IXYS IXFN140N20P has a maximum continuous drain current rating of 115A, making it suitable for demanding power applications.
It can handle a maximum drain-source voltage of up to 200V, providing enhanced robustness for high-voltage applications.
The maximum power dissipation for this model is 680W, supporting high-current and high-voltage uses.
This model comes in a rugged 4-pin SOT-227 package, which is designed for panel mounting and effective thermal dissipation.
The typical gate charge at nominal gate drive voltages is 240nC, facilitating efficient switching performance.
This unit measures 38.23mm in length, 25.42mm in width, and 9.6mm in height, making it suitable for space-constrained designs.
The IXFN140N20P features an enhancement mode N-channel design, which allows for fast and controlled switching.
The maximum drain-source resistance is 18mΩ, which helps to improve efficiency by reducing power losses during operation.
It utilizes HiPerFET technology, which includes a fast intrinsic diode to enhance system protection and switching speed.
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