DiodesZetex P-Channel MOSFET 160 mA 60 V Enhancement 3-Pin E-Line ZVP3306A

The DiodesZetex ZVP3306A is a high-quality P-Channel MOSFET, engineered for efficient switching and electronic control in various industrial, automotive, and commercial applications. With a maximum continuous drain current of 160 mA and a maximum drain-source voltage of 60 V, this MOSFET is well-suited for low-power switching, signal processing, and power management circuits.

Featuring an enhancement channel mode, the ZVP3306A provides low power dissipation and precise gate control, making it ideal for applications requiring fast response and low leakage currents. The device is housed in a compact 3-pin E-Line package that allows easy through-hole mounting on PCBs.

Its robust maximum drain-source resistance of 14 Ω ensures efficient performance, while the maximum power dissipation of 625 mW facilitates effective thermal management even under extended operation. The MOSFET operates reliably across an extended temperature range from -55°C up to 150°C, making it suitable for harsh environments and industrial settings.

The maximum gate-source voltage of 20 V and a forward voltage of 0.68 V contribute to its versatility in electronic designs, enabling compatibility with various logic levels and circuit configurations. The device meets the automotive standard AEC-Q101, ensuring reliability and performance in automotive electronic circuits.

The ZVP3306A's through-hole mount and compact physical dimensions (length 4.77 mm, width 2.41 mm, height 4.01 mm) support convenient PCB integration and facilitate machine insertion for efficient assembly. This MOSFET is widely used in switching converters, power management modules, signal interfaces, automotive electronics, and industrial automation systems.

For engineers and designers seeking a reliable, efficient, and compact P-Channel MOSFET, the DiodesZetex ZVP3306A delivers robust performance, compliance with automotive standards, and adaptability to multiple industrial use cases.

High-performance P-Channel MOSFET designed for efficient switching applications. Supports up to 160 mA continuous drain current for reliable circuit operation. Features a maximum drain-source voltage of 60 V suitable for a wide range of electronic designs.

Enhancement channel mode ensures low power dissipation and precise control. Compact 3-pin E-Line package allows easy integration in PCB layouts. Through-hole mounting enhances durability and simplifies assembly processes.

Maximum power dissipation of 625 mW enables robust thermal management. Operates over a wide temperature range from -55°C to 150°C for demanding environments. Automotive standard AEC-Q101 compliance for reliability in automotive electronics.

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