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DiodesZetex Type P-Channel MOSFET 60 V 18.2 A Enhancement Mode 4-Pin SOT-223 DMP6023LE-13

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DiodesZetex Type P-Channel MOSFET 60 V 18.2 A Enhancement Mode 4-Pin SOT-223 DMP6023LE-13

Name: DiodesZetex Type P-Channel MOSFET 60 V 18.2 A Enhancement Mode 4-Pin SOT-223 DMP6023LE-13
Brand: DiodesZetex
SKU: 412668
Price: 0.55 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.65mm
Length	6.55mm
Model	DMP6023LE-13
Width	3.55mm
Mount Type	Surface
Series	DMP
Maximum Operating Temperature	150°C
Package Type	SOT-223
Minimum Operating Temperature	-55°C
Pin Count	4
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	18.2A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	35mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	17.3W
Typical Gate Charge Qg @ Vgs	53.1nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.2V

Key Features

Enhancement mode P-Channel MOSFET for efficient switching applications.
Maximum continuous drain current of 18.2 A ensures high current handling.
Maximum drain-source voltage of 60 V supports medium voltage circuits.
Low drain-source resistance of 35 mΩ minimizes power loss.
Compact surface mount SOT-223 4-pin package measuring 6.55 mm length, 3.55 mm width, and 1.65 mm height.
Typical gate charge of 53.1 nC enables fast switching performance.
Maximum power dissipation of 17.3 W for reliable thermal management.
Wide operating temperature range from -55 °C to 150 °C for demanding environments.

Product Description

DiodesZetex DMP6023LE-13 is a high-performance P-Channel MOSFET designed for use in electronic circuits requiring efficient switching and power management. Featuring a maximum continuous drain current of 18.2 A and a maximum drain-source voltage rating of 60 V, this device provides robust operation in compact form factor.

The MOSFET comes in a 4-pin surface mount SOT-223 package with dimensions 6.55 mm (L) x 3.55 mm (W) x 1.65 mm (H), suitable for dense PCB layouts in automotive, industrial, and consumer electronics applications. Its enhancement mode channel topology and low drain-source resistance of 35 mΩ reduce conduction losses, helping improve overall efficiency.

This device exhibits a typical gate charge of 53.1 nC at 5 V, enabling fast switching speeds for power control and regulation circuits. It supports a maximum power dissipation of 17.3 W, ensuring thermal stability under high loads and harsh conditions. The operating temperature range spans from -55 °C to 150 °C, making it suitable for demanding environments.

The DMP6023LE-13 is AEC-Q101 qualified, conforming to automotive industry reliability standards, and can be confidently applied in automotive power management and control applications. Its maximum gate-source voltage rating of ±20 V and forward voltage of -1.2 V provide additional electrical robustness.

This product is ideal for use in industrial electronics, motor controllers, power supplies, and various switching applications requiring reliable, compact, and efficient MOSFET solutions.

Enhancement mode P-Channel MOSFET with 18.2 A drain current and 60 V voltage rating. Low Rds(on) of 35 mΩ in 4-pin SOT-223 surface-mount package. Typical gate charge 53.1 nC enables fast, efficient switching. Maximum power dissipation 17.3 W with wide -55 to 150 °C operating temperature.

Automotive certified with AEC-Q101 compliance. Explore more high-quality semiconductor components in the MOSFET category at EnvMart, designed for industrial, automotive, and consumer electronics applications.