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Infineon N-Channel Power MOSFET 22A 80V 3-Pin TO-220 IPP040N08NF2SAKMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 9.45mm
Length 10.36mm
Model IPP040N08NF2SAKMA1
Width 4.57mm
Mount Type Through Hole
Series IPP040N08NF2S
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 22A
Maximum Drain Source Voltage Vds 80V
Maximum Drain Source Resistance Rds 4mΩ
Maximum Power Dissipation Pd 150W
Typical Gate Charge Qg @ Vgs 54nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • This MOSFET operates with a maximum power dissipation of 150W ensuring reliable operation.
  • It features a TO-220 package with 3 pins suitable for through-hole mounting.
  • The device supports a maximum gate source voltage of 20V and has a typical gate charge of 54nC at 4.5V gate voltage.
  • The maximum drain source resistance is only 4mΩ, optimizing conduction losses.
  • The operating temperature range spans from -55°C to 175°C enabling use in harsh environments.
  • The forward voltage is 1.2V which helps reduce power losses during conduction.
  • The MOSFET is 100% avalanche tested to ensure robustness against voltage spikes.

Product Description

Infineon IPP040N08NF2SAKMA1 N-Channel Power MOSFET is engineered for high efficiency and durability in power electronics applications requiring fast switching and low conduction losses. With a maximum continuous drain current of 22A and a maximum drain source voltage rating of 80V, this device is ideal for managing substantial power loads in industrial and electronic circuits.

The TO-220 package with through-hole mounting simplifies integration into diverse assemblies, providing excellent thermal performance and mechanical robustness. Featuring a low 4mΩ maximum drain source resistance, the MOSFET minimizes conduction losses thus enhancing overall system efficiency.

Designed to operate over a broad temperature range from -55°C to 175°C, it caters to demanding applications, including industrial, automotive, and power management systems. The device supports a maximum gate source voltage of 20V and a typical gate charge of 54nC at 4.5V, facilitating efficient gate drive and switching performance.

Additional reliability is assured through 100% avalanche testing, safeguarding against voltage transients. Forward voltage is low at 1.2V, further reducing power dissipation during switching activities.

This MOSFET supports through-hole PCB mounting for easy integration. The package dimensions provide a compact footprint beneficial for space-constrained designs. Applications include power supplies, motor drives, switching regulators, and electronic load management.

The device is RoHS compliant, aligning with modern environmental standards. Its robust performance parameters make it suitable for use in industrial automation, consumer electronics, and automotive circuits.

Choose the IPP040N08NF2SAKMA1 for dependable high-current switching in compact power electronics designs. Explore additional semiconductor options and related components in the Electronics & Electricals category at EnvMart.

Infineon N-Channel Power MOSFET 22A 80V 3-Pin TO-220 IPP040N08NF2SAKMA1
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Frequently Asked Questions

The maximum continuous drain current for the Infineon IPP040N08NF2SAKMA1 is 22A.

This model has a maximum drain source voltage rating of 80V.

The device comes in a TO-220 package and is designed for through-hole mounting.

The maximum power dissipation for the Infineon IPP040N08NF2SAKMA1 is 150W.

The operating temperature range spans from -55°C to 175°C.

This MOSFET supports a maximum gate source voltage of 20V.

The typical gate charge at a 4.5V gate voltage is 54nC.

The maximum drain source resistance for this model is 4mΩ.

The dimensions of the device are 10.36mm in length, 4.57mm in width, and 9.45mm in height.

The forward voltage for the Infineon IPP040N08NF2SAKMA1 is 1.2V.

Yes, this device is 100% avalanche tested to ensure robustness against voltage spikes.

This model is suitable for applications including power supplies, motor drives, switching regulators, and electronic load management.

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