DiodesZetex Transistor PNP 500 mA 300 V 2 W Surface Mount SOT-223 4-Pin FZT757TA

DiodesZetex FZT757TA is a high voltage PNP bipolar transistor designed for various electronic applications requiring robust switching and amplification capabilities. It supports a continuous collector current of 500 mA and can withstand collector-emitter voltages up to 300 V, making it well-suited for circuits with high voltage demands.

The device is packaged in a surface mount SOT-223 4-pin configuration which enables compact PCB layouts with efficient thermal dissipation. Its maximum power dissipation is rated at 2 watts, adequate for medium power applications in industrial and automotive sectors.

With a DC current gain starting at 40 and a maximum transition frequency of 30 MHz, the FZT757TA ensures reliable performance at moderate frequencies. It is engineered to operate reliably within a broad temperature range from -55°C to +150°C, conforming to the AEC-Q101 automotive standard, which assures durability and suitability for automotive electronics.

The transistor's physical dimensions (length 6.7 mm, width 7.3 mm, height 1.7 mm) make it a versatile component for electronic assemblies requiring space optimization.

Applications include power management, signal amplification, and switching in automotive controls, industrial monitoring equipment, and commercial electronic devices. The single transistor PNP configuration provides design flexibility for various circuit topologies.

The transistor is housed in a compact 4-pin SOT-223 surface mount package. It supports a maximum collector current of 500 mA with a collector-emitter voltage rating of 300 V. Maximum power dissipation is 2 watts, suitable for industrial-grade applications.

Meets the automotive AEC-Q101 qualification standard, ensuring reliability. Wide operating temperature range of -55°C to 150°C suits harsh environments. Ideal for industrial, automotive, and commercial electronic circuit designs.

Physical dimensions of 6.7 mm length, 7.3 mm width, and 1.7 mm height enable compact device design.

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