Vishay P-Channel MOSFET, 12 A, 20 V, Enhancement Mode, 6-Pin SC-70 Package SIA461DJ-T1-GE3

Vishay SIA461DJ-T1-GE3 is a P-Channel Enhancement Mode MOSFET designed for surface mount applications with a durable 6-pin SC-70 package. This transistor supports a maximum continuous drain current of 12 A and a maximum drain-source voltage of 20 V, making it suitable for medium power electronic switching and amplification tasks in various industrial and consumer electronic circuits.

Featuring a low maximum drain-source resistance of 55 milliohms, the MOSFET ensures efficient conduction minimizing power loss and heat generation during operation. The device supports a maximum power dissipation of 17.9 W, allowing adequate thermal management in compact PCB layouts.

Designed to operate over a wide temperature range from -55°C to 150°C, it offers reliable performance in diverse environmental conditions common to industrial, automotive (non-certified), and consumer applications. Its typical gate charge of 30 nC enables fast switching, suitable for pulse width modulation and switching applications.

The compact physical size with dimensions of 1.7 mm length, 1.7 mm width, and 0.8 mm height allows for efficient use of PCB real estate in densely packed circuit designs. The device supports a maximum gate-source voltage of -8 V to +8 V, ensuring robust control of gate threshold during switching.

This Vishay MOSFET is integral for applications such as power management in compact electronic devices, signal amplification, load switching in portable equipment, and any scenario requiring efficient P-channel transistor performance with small form factor packaging.

Reliable surface mount P-channel MOSFET with enhancement mode channel. High current capability with 12 A maximum continuous drain. Low conduction losses due to 55 mΩ maximum drain-source resistance. Effective thermal handling with 17.9 W maximum power dissipation.

Wide operating temperature range from -55°C up to 150°C. Compact 6-pin SC-70 package for space-saving designs. Fast switching thanks to typical 30 nC gate charge. Robust gate control voltages of -8 V to +8 V. Optimized forward voltage of -1.2 V.

Suitable for industrial, consumer electronics, and power management uses. Explore the Vishay MOSFET range and other semiconductor components at EnvMart for robust electronic design solutions.