onsemi PNP Bipolar Transistor 50 V, -50 mA, 300 mW Power Dissipation, 3-Pin SOT-23 MMBT5087LT1G

onsemi MMBT5087LT1G PNP Bipolar Transistor is engineered for high gain and low noise amplifier applications, ideal for general purpose electronic circuits. This transistor is housed in a miniature SOT-23 package that facilitates low power surface mounting and efficient board space utilization.

The device supports a maximum DC collector current of -50 mA and a collector-emitter voltage of -50 V, making it well suited for switching and amplification in low power applications. With a minimum DC current gain (hFE) of 250 and a maximum transition frequency of 20 MHz, it enables stable and effective signal amplification.

Intended for industrial and automotive electronics, the transistor complies with the AEC-Q101 standard, ensuring high reliability under demanding conditions. It dissipates up to 300 mW power and operates safely up to 150°C, offering robustness for embedded systems.

The compact SOT-23 form factor with dimensions 3.04 mm by 1.4 mm by 1.11 mm allows integration into densely packed circuit boards, benefitting consumer electronics, automotive controls, and instrumentation devices.

This transistor is ideal for use in industrial, automotive, laboratory amplifiers, and electronic manufacturing applications requiring efficient, low noise amplification in a miniature surface-mount package.

Maximum DC collector current of -50 mA. Collector-emitter voltage rating of -50 V. SOT-23 surface mount package. High current gain minimum 250 hFE. Power dissipation of 300 mW. Compliance with AEC-Q101 automotive standard.

Maximum frequency 20 MHz. Compact footprint with 3-pin configuration. The product is made in China and is supplied new for all applications. Explore more onsemi transistors and components on EnvMart for your next project.

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