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Toshiba N-Channel Enhancement MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 15.1mm |
| Length | 10.16mm |
| Model | TK35E08N1 |
| Width | 4.45mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 12.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 72W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- High maximum continuous drain current of 55 A for demanding electronic applications.
- Durable TO-220 through-hole mounting package for reliable integration.
- Maximum drain-source voltage rating of 80 V ensuring robust operation.
- Low maximum drain-source resistance at 12.2 milliohms for efficient conduction.
- Capable of dissipating up to 72 W power to handle thermal loads effectively.
- Typical gate charge of 25 nC facilitating rapid switching performance.
- Wide maximum gate-source voltage range from -20 V to +20 V for flexible control.
- Compact dimensions with length 10.16 mm, width 4.45 mm, and height 15.1 mm.
Product Description
Toshiba TK35E08N1 is a high-performance N-Channel Enhancement MOSFET designed for electronic and power applications requiring reliable switching and conduction characteristics. This transistor operates with a maximum continuous drain current of 55 A and maximum drain-source voltage of 80 V, packaged in a durable 3-pin TO-220 through-hole form factor, facilitating easy mounting and integration in printed circuit boards.
The device features a low maximum drain-source resistance (Rds) of 12.2 milliohms, enabling efficient power handling and minimized losses. Its maximum power dissipation capability of 72 W supports demanding industrial and commercial applications. The typical gate charge of 25 nanocoulombs allows for fast switching speeds, optimizing operation in switching regulators, motor control circuits, and power management systems.
This MOSFET supports a wide gate-source voltage range from -20 V to +20 V, providing robustness in control circuitry. Its compact size, measuring 15.1 mm in height, 10.16 mm in length, and 4.45 mm in width, ensures adaptability in compact electronic designs. The device is rated for maximum operating temperatures up to 150°C, ensuring reliability in harsh environments such as industrial electronics, HVAC control systems, and automotive applications (not automotive-certified).
Being an enhancement mode transistor, it is well-suited for switching applications requiring low on-resistance and high efficiency. The Toshiba TK series delivers proven performance and quality in discrete semiconductor solutions.
High continuous drain current of 55 A for power electronics. Robust TO-220 package facilitates through-hole mounting and heat dissipation. Low Rds(on) minimizes power loss during operation. Wide gate-source voltage range allows flexible drive control.
Thermally stable up to 150°C supports demanding thermal environments. Compact form factor supports high-density circuit designs. Suitable for applications in industrial electronics, laboratory equipment, and commercial power systems.
Enhancement mode MOSFET ensures efficient switching performance.
This product is categorized under MOSFETs in the semiconductor component segment at EnvMart, ideal for buyers seeking durable and efficient power transistors for various electronic control and power conversion systems.
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Frequently Asked Questions
The maximum continuous drain current of the Toshiba TK35E08N1 is 55 A, making it suitable for demanding electronic applications.
This model has a maximum drain-source voltage rating of 80 V, ensuring robust operation in various applications.
The MOSFET can dissipate up to 72 W of power, allowing it to handle thermal loads effectively in demanding environments.
It supports a wide maximum gate-source voltage range from -20 V to +20 V, providing flexibility in control circuitry.
The dimensions of the Toshiba TK35E08N1 are 15.1 mm in height, 10.16 mm in length, and 4.45 mm in width.
This model is packaged in a TO-220 through-hole form factor, facilitating easy mounting and integration on printed circuit boards.
The maximum drain-source resistance (Rds) is 12.2 milliohms, which enables efficient conduction and minimizes power losses during operation.
The typical gate charge is 25 nanocoulombs, allowing for rapid switching performance in various applications.
The maximum operating temperature for this MOSFET is rated up to 150°C, ensuring reliability in harsh environments.
This model features an N-channel type, which is suitable for enhancement mode applications requiring efficient switching.
It is suitable for applications in industrial electronics, laboratory equipment, and commercial power systems, particularly in switching regulators and motor control circuits.
The Toshiba TK35E08N1 has a total of 3 pins, which is standard for its TO-220 package type.
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