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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3.05mm |
| Model | ZXMP10A13FTA |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | ZXMP10A13F |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 700mA |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 1Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 806mW |
| Typical Gate Charge Qg @ Vgs | 3.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.95V |
DiodesZetex ZXMP10A13FTA is a P-Channel MOSFET designed for electronic applications requiring low voltage switching and amplification. The transistor supports a maximum continuous drain current of 700 mA and withstands drain source voltages up to 100 V, making it suitable for discrete semiconductor circuits in consumer electronics, automotive, and industrial systems.
This device is packaged in a compact 3-pin SOT-23 surface-mount package, making it ideal for modern PCB designs focused on high-density integration. The enhancement mode operation allows the transistor to switch from off to on state efficiently with gate biases.
The maximum power dissipation of 806 mW ensures reliable thermal handling under typical operating conditions. Its robust design supports operating temperatures from -55°C to 150°C, catering to demanding environmental conditions including automotive applications.
Furthermore, the transistor complies with the AEC-Q101 automotive standard, qualifying it for use in automotive electronics where reliability and performance are critical.
Key performance attributes include a low maximum drain source resistance of 1 Ω, typical gate charge of 3.5 nC at the gate-source voltage, and a tolerant gate voltage range of ±20 V, allowing flexible design control margins. The transistor features a forward voltage drop of approximately -0.95 V and compact physical dimensions (3.05 mm length, 1.4 mm width, and 1 mm height).
This MOSFET is manufactured in China and is supplied new in sealed packaging, suitable for industrial, automotive, telecommunications, and consumer electronics applications requiring reliable power switching devices.
This P-Channel MOSFET is optimized for low power and efficient switching applications. Operates safely within a broad temperature range and automotive standards. Compact SOT-23 package facilitates space-saving PCB assembly.
Low gate charge enhances switching speed and energy efficiency. Robust maximum drain-source voltage and current ratings suitable for diverse circuits. Wide gate voltage tolerance ensures compatibility with various control voltages.
Reliable performance at up to 806 mW power dissipation. Standard surface mount technology package promotes automated assembly integration. Complies with automotive quality standards for high reliability. Ideal for industrial, automotive, and electronic device manufacturing sectors.
Explore more MOSFET products on EnvMart for your electronic component sourcing needs.
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