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DiodesZetex P-Channel MOSFET, 700 mA, 100 V Enhancement Mode, 3-Pin SOT-23 ZXMP10A13FTA

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1mm
Length 3.05mm
Model ZXMP10A13FTA
Width 1.4mm
Mount Type Surface
Series ZXMP10A13F
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 700mA
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 1Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 806mW
Typical Gate Charge Qg @ Vgs 3.5nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -0.95V

Key Features

  • This MOSFET operates in enhancement mode with a maximum power dissipation of 806 mW.
  • Has a maximum continuous drain current of 700 mA suitable for low power switching applications.
  • Features low drain source resistance of 1 Ohm ensuring efficient operation.
  • Operates reliably over temperature ranges from -55°C to 150°C.
  • Compact SOT-23 surface mount package suitable for space-sensitive electronic designs.
  • Includes automotive standard certification AEC-Q101 for quality assurance.
  • Typical gate charge is 3.5 nC at Vgs, providing fast switching performance.
  • Maximum gate source voltage rating of ±20 V for robust control input tolerance.

Product Description

DiodesZetex ZXMP10A13FTA is a P-Channel MOSFET designed for electronic applications requiring low voltage switching and amplification. The transistor supports a maximum continuous drain current of 700 mA and withstands drain source voltages up to 100 V, making it suitable for discrete semiconductor circuits in consumer electronics, automotive, and industrial systems.

This device is packaged in a compact 3-pin SOT-23 surface-mount package, making it ideal for modern PCB designs focused on high-density integration. The enhancement mode operation allows the transistor to switch from off to on state efficiently with gate biases.

The maximum power dissipation of 806 mW ensures reliable thermal handling under typical operating conditions. Its robust design supports operating temperatures from -55°C to 150°C, catering to demanding environmental conditions including automotive applications.

Furthermore, the transistor complies with the AEC-Q101 automotive standard, qualifying it for use in automotive electronics where reliability and performance are critical.

Key performance attributes include a low maximum drain source resistance of 1 Ω, typical gate charge of 3.5 nC at the gate-source voltage, and a tolerant gate voltage range of ±20 V, allowing flexible design control margins. The transistor features a forward voltage drop of approximately -0.95 V and compact physical dimensions (3.05 mm length, 1.4 mm width, and 1 mm height).

This MOSFET is manufactured in China and is supplied new in sealed packaging, suitable for industrial, automotive, telecommunications, and consumer electronics applications requiring reliable power switching devices.

This P-Channel MOSFET is optimized for low power and efficient switching applications. Operates safely within a broad temperature range and automotive standards. Compact SOT-23 package facilitates space-saving PCB assembly.

Low gate charge enhances switching speed and energy efficiency. Robust maximum drain-source voltage and current ratings suitable for diverse circuits. Wide gate voltage tolerance ensures compatibility with various control voltages.

Reliable performance at up to 806 mW power dissipation. Standard surface mount technology package promotes automated assembly integration. Complies with automotive quality standards for high reliability. Ideal for industrial, automotive, and electronic device manufacturing sectors.

Explore more MOSFET products on EnvMart for your electronic component sourcing needs.

DiodesZetex P-Channel MOSFET, 700 mA, 100 V Enhancement Mode, 3-Pin SOT-23 ZXMP10A13FTA
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Frequently Asked Questions

The maximum continuous drain current for the ZXMP10A13FTA is 700 mA.

This model can withstand a maximum drain-source voltage of 100 V.

The typical gate charge at gate-source voltage (Vgs) is 3.5 nC.

The maximum power dissipation for this MOSFET is 806 mW.

The dimensions of the SOT-23 package are 3.05 mm in length, 1.4 mm in width, and 1 mm in height.

It operates reliably over a temperature range from -55°C to 150°C.

The maximum gate-source voltage rating for this unit is ±20 V.

This model complies with the AEC-Q101 automotive standard.

The forward voltage drop is approximately -0.95 V.

This MOSFET features a P-channel type.

The maximum drain-source resistance is 1 Ω.

This model uses a surface mount type for installation.

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