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DiodesZetex High Voltage 500 mA NPN Bipolar Transistor, 300 V, 3-Pin SOT-23 Package MMBTA42-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model MMBTA42-7-F
Width 2.5mm
Mount Type Surface
Series MMBTA42
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
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RS Stock No. 711-4904Brand: DiodesZetexManufacturers Part No.: MMBTA42-7-F
Pin Count 3
Maximum Collector Emitter Voltage Vceo 300V
Minimum DC Current Gain hFE 25
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 300V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 500mA
Transistor Configuration Single

Key Features

  • This transistor features a maximum DC collector current of 500 mA for medium power applications.
  • It supports a maximum collector-emitter voltage of 300 V, suitable for high voltage circuits.
  • The device has a minimum DC current gain (hFE) of 25, ensuring adequate amplification.
  • The package type is compact SOT-23 with a height of 1.1 mm, length of 3 mm, and width of 2.5 mm.
  • It is designed for surface mount applications with a pin count of three for straightforward mounting.
  • The transistor polarity is NPN, commonly used in switching and amplification circuits.
  • It supports a maximum power dissipation of 300 mW and maximum operating temperature of up to 150°C.
  • The minimum operating temperature is rated at -55°C, suitable for a wide range of environments.

Product Description

DiodesZetex MMBTA42-7-F transistor is a 500 mA rated NPN bipolar transistor designed for high voltage switching and amplification applications. Packaged in a compact 3-pin SOT-23 surface mount case, it allows for efficient PCB mounting in space-constrained designs.

This transistor supports a collector-emitter voltage of 300 V and collector base voltage of 300 V, making it suitable for medium to high voltage electronic circuits including power management and general purpose amplification.

The minimum DC current gain is 25, providing reliable amplification, along with a maximum power dissipation of 300 mW. Its operating temperature range spans from -55°C to 150°C, supporting use in challenging environments including automotive and industrial sectors.

The package dimensions are 3 mm length, 2.5 mm width, and 1.1 mm height, optimized for effective heat dissipation and mounting ease in compact electronic assemblies. The transistor has a maximum emitter-base voltage of 6 V and comprises three pins for surface mounting.

Certified to automotive standard AEC-Q101, this transistor is suitable for automotive, industrial, and consumer electronics requiring reliable and efficient bipolar transistors. This transistor features a maximum DC collector current of 500 mA for medium power applications.

It supports a maximum collector-emitter voltage of 300 V, suitable for high voltage circuits. The device has a minimum DC current gain (hFE) of 25, ensuring adequate amplification. The package type is compact SOT-23 with a height of 1.1 mm, length of 3 mm, and width of 2.5 mm.

It is designed for surface mount applications with a pin count of three for straightforward mounting. The transistor polarity is NPN, commonly used in switching and amplification circuits. It supports a maximum power dissipation of 300 mW and maximum operating temperature of up to 150°C.

The minimum operating temperature is rated at -55°C, suitable for a wide range of environments. The maximum collector base voltage and emitter base voltage are 300 V and 6 V respectively, supporting transistor operation limits.

This component meets automotive standard AEC-Q101 ensuring reliability in automotive environments.

This product is essential for electronic circuit designers and manufacturers involved in industrial, automotive, and consumer electronics sectors. It facilitates efficient switching and amplification in a wide array of applications such as power supplies, signal processing, and control circuits.

Explore our range of Bipolar Transistors to find compatible and complementary components for your design needs available on EnvMart.

DiodesZetex High Voltage 500 mA NPN Bipolar Transistor, 300 V, 3-Pin SOT-23 Package MMBTA42-7-F
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Frequently Asked Questions

The maximum collector-emitter voltage for this model is 300 V, making it suitable for high voltage circuits.

It can handle a maximum DC collector current of 500 mA, which is suitable for medium power applications.

The SOT-23 package has a length of 3 mm, a width of 2.5 mm, and a height of 1.1 mm.

The minimum DC current gain (hFE) for this transistor is 25, ensuring adequate amplification.

The operating temperature range spans from -55°C to 150°C, making it suitable for a wide range of environments.

The maximum power dissipation for this transistor is 300 mW.

This model is an NPN bipolar transistor, commonly used in switching and amplification circuits.

This transistor has a pin count of three, designed for surface mounting applications.

It is certified to automotive standard AEC-Q101, ensuring reliability in automotive applications.

The maximum emitter-base voltage (VEBO) for this model is 6 V.

This transistor is suitable for high voltage switching and amplification applications, including power management and general purpose amplification.

The country of origin for this transistor is India.

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