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Infineon P-Channel MOSFET 62 A, 100 V Enhancement Mode, 3-Pin TO-220 IPP330P10NMAKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 4.57mm
Length 10.36mm
Model IPP330P10NMAKSA1
Width 15.95mm
Mount Type Surface
Series IPP
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 62A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 33mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 300W
Typical Gate Charge Qg @ Vgs -189nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf -1.2V

Key Features

  • Maximum continuous drain current of 62 amperes ensures high current handling capability.
  • Drain-source voltage rating of 100 volts supports medium voltage applications.
  • Enhancement mode operation with low on-resistance of 33 milliohms reduces power losses.
  • High maximum power dissipation of 300 watts allows efficient thermal management.
  • Robust gate-source voltage rating of 20 volts for stable control and switching.
  • Compact TO-220 package with 3 pins facilitates industry standard mounting.
  • Wide operating temperature range from -55°C to 175°C suits demanding environmental conditions.
  • Low typical gate charge (189 nC) enables fast switching performance.

Product Description

Infineon IPP330P10NMAKSA1 is a high-performance P-Channel MOSFET semiconductor device designed for power and electronic applications requiring efficient switching and load control. This enhancement mode MOSFET supports a maximum continuous drain current of 62 A and a maximum drain-source voltage of 100 V, making it suitable for medium power levels in industrial and automotive systems.

The device is housed in a compact TO-220 package with three pins designed for surface mounting. It features a low on-resistance of 33 milliohms to minimize conduction losses and improve overall circuit efficiency. The robust gate-source voltage rating of ±20 V and a typical gate charge of 189 nC enable reliable gate drive and fast switching performance.

Operating comfortably in harsh environments, the MOSFET has a broad temperature range from -55°C to 175°C, allowing usage in automotive and industrial automation fields. Its maximum power dissipation capacity is 300 W, providing effective thermal headroom for demanding applications.

This device is ideal in battery management systems, load switches, and reverse polarity protection circuits, reducing the complexity of designs in medium and low power applications while maintaining ruggedness and reliability.

The TO-220 package ensures compatibility with standard footprints for easier integration onto printed circuit boards (PCBs). The MOSFET's avalanche ruggedness and reliable performance support high-quality applications in industrial automation, HVAC control, and power electronics.

Maximum continuous drain current of 62 A for high-load applications. Drain-source voltage of 100 V supports medium voltage circuits. Low on-resistance of 33 mΩ minimizes conduction losses. High power dissipation rating of 300 W allows efficient heat management.

Gate-source voltage rating of 20 V ensures stable gate control. 3-pin TO-220 surface mount package for easy PCB integration. Operating temperature range from -55°C to 175°C for reliability. Typical gate charge of 189 nC enables fast switching and low losses.

Designed for battery management, load switching, and reverse polarity protection. Industry-standard package footprint with avalanche ruggedness. Explore more Infineon MOSFETs and semiconductor solutions at EnvMart for your industrial, automotive, and power management needs.

Infineon P-Channel MOSFET 62 A, 100 V Enhancement Mode, 3-Pin TO-220 IPP330P10NMAKSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 62 A.

It has a maximum drain-source voltage rating of 100 V, suitable for medium voltage applications.

The on-resistance is 33 milliohms, which helps minimize conduction losses.

The maximum power dissipation capacity is 300 W, allowing for effective thermal management.

It operates within a temperature range from -55°C to 175°C, making it suitable for harsh environments.

The typical gate charge is 189 nC, which enables fast switching performance.

This MOSFET is housed in a TO-220 package with a 3-pin configuration for surface mounting.

The maximum gate-source voltage rating is ±20 V, ensuring stable gate control.

It is designed for applications such as battery management systems, load switches, and reverse polarity protection circuits.

This model features a P-channel type configuration.

The dimensions of this MOSFET are 10.36 mm in length, 15.95 mm in width, and 4.57 mm in height.

It features a low on-resistance and a typical gate charge that allows for efficient switching performance and minimizes power losses.

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