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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.36mm |
| Model | IPP330P10NMAKSA1 |
| Width | 15.95mm |
| Mount Type | Surface |
| Series | IPP |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 62A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 33mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | -189nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Infineon IPP330P10NMAKSA1 is a high-performance P-Channel MOSFET semiconductor device designed for power and electronic applications requiring efficient switching and load control. This enhancement mode MOSFET supports a maximum continuous drain current of 62 A and a maximum drain-source voltage of 100 V, making it suitable for medium power levels in industrial and automotive systems.
The device is housed in a compact TO-220 package with three pins designed for surface mounting. It features a low on-resistance of 33 milliohms to minimize conduction losses and improve overall circuit efficiency. The robust gate-source voltage rating of ±20 V and a typical gate charge of 189 nC enable reliable gate drive and fast switching performance.
Operating comfortably in harsh environments, the MOSFET has a broad temperature range from -55°C to 175°C, allowing usage in automotive and industrial automation fields. Its maximum power dissipation capacity is 300 W, providing effective thermal headroom for demanding applications.
This device is ideal in battery management systems, load switches, and reverse polarity protection circuits, reducing the complexity of designs in medium and low power applications while maintaining ruggedness and reliability.
The TO-220 package ensures compatibility with standard footprints for easier integration onto printed circuit boards (PCBs). The MOSFET's avalanche ruggedness and reliable performance support high-quality applications in industrial automation, HVAC control, and power electronics.
Maximum continuous drain current of 62 A for high-load applications. Drain-source voltage of 100 V supports medium voltage circuits. Low on-resistance of 33 mΩ minimizes conduction losses. High power dissipation rating of 300 W allows efficient heat management.
Gate-source voltage rating of 20 V ensures stable gate control. 3-pin TO-220 surface mount package for easy PCB integration. Operating temperature range from -55°C to 175°C for reliability. Typical gate charge of 189 nC enables fast switching and low losses.
Designed for battery management, load switching, and reverse polarity protection. Industry-standard package footprint with avalanche ruggedness. Explore more Infineon MOSFETs and semiconductor solutions at EnvMart for your industrial, automotive, and power management needs.
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