Vishay D Series N-Channel Power MOSFET, 8.7 A, 500 V Enhancement Mode, 3-Pin TO-220AB SIHP8N50D-GE3

Vishay SIHP8N50D-GE3 is a high-quality D Series N-Channel Power MOSFET designed for electronic and industrial applications requiring efficient switching and power management. Featuring a maximum continuous drain current of 8.7 amperes and a drain-source voltage rating of 500 volts, this enhancement mode transistor operates reliably with a 3-pin TO-220AB package, facilitating easy through-hole installation on PCBs.

This MOSFET supports a maximum power dissipation of 156 watts, enabling safe operation in demanding thermal environments. It is engineered to operate across an extensive temperature range from -55°C to 150°C, making it suitable for industrial, automotive, and commercial electronics.

With a low drain-source resistance of 0.85 ohms, it ensures minimal conduction losses. The typical gate charge of 30 nanocoulombs allows for rapid switching speeds, enhancing performance in power supply circuits and motor drivers. The device's gate-source voltage rating of ±30 volts provides protection against gate overvoltage.

Its compact size, measuring 10.51 mm in length, 4.65 mm in width, and 9.01 mm in height, facilitates integration into various electronic assemblies without consuming excessive space. The forward voltage drop of 1.2 volts contributes to overall efficiency.

Applications span power electronics, power supplies, motor control, and switching systems in industrial, automotive, consumer electronics, and laboratory equipment sectors. The Vishay D Series MOSFET ensures reliable and efficient power switching for a wide range of uses.

Maximum continuous drain current of 8.7 amperes for reliable power handling. Maximum drain-source voltage of 500 volts with enhancement channel mode. Power dissipation up to 156 watts for effective thermal performance. Package type is 3-pin TO-220AB suitable for through-hole mounting.

Operates across a wide temperature range from -55°C to 150°C. Low maximum drain-source resistance of 0.85 ohms for efficient conduction. Typical gate charge of 30 nanocoulombs ensuring fast switching. Maximum gate-source voltage rating of ±30 volts for safe gate operation.

Compact dimensions: length 10.51 mm, width 4.65 mm, height 9.01 mm. Forward voltage drop of 1.2 volts enhances energy efficiency.

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