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Vishay EF Series N-Channel Power MOSFET, 8.4 A, 600 V, Enhancement Mode, 3-Pin TO-247 SiHG186N60EF-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.58mm |
| Length | 33.91mm |
| Model | SiHG186N60EF-GE3 |
| Width | 15.29mm |
| Mount Type | Through Hole |
| Series | EF |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8.4A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 168mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 156W |
| Typical Gate Charge Qg @ Vgs | 21nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Employs 4th generation EF series technology for improved performance.
- Features a low figure-of-merit combining low on-resistance and gate charge.
- Enhanced capacitance characteristics reduce switching and conduction losses.
- Avalanche energy rated for robust surge current handling.
- Designed for through-hole mounting in a TO-247 package.
- Operates reliably between -55°C to 150°C.
- Maximum power dissipation of 156 W supports high power applications.
- Typical gate charge of 21 nC at 10 V gate-source voltage.
Product Description
Vishay SiHG186N60EF-GE3 is a high-performance EF Series N-Channel Power MOSFET designed to deliver efficient switching in demanding industrial and commercial applications. It is housed in a durable 3-pin TO-247 through-hole package, providing ease of mounting and excellent thermal dissipation.
This device supports a maximum continuous drain current of 8.4 amperes and withstands a maximum drain-source voltage of 600 volts, making it suitable for power management in automotive, industrial machinery, and power supply applications.
The MOSFET utilizes 4th generation EF technology that achieves a low figure-of-merit by combining a low on-resistance and gate charge, resulting in reduced conduction and switching losses. It features an enhanced body diode with avalanche energy rating, ensuring reliable operation under surge conditions.
Operating in enhancement mode, it provides an effective charge control with a typical gate charge of 21 nC at a gate-source voltage of 10 V and is rated for maximum gate-source voltages of ±30 V.
With a maximum power dissipation of 156 W and operating temperature range from -55°C to 150°C, this MOSFET is ideal for high power switching applications in industrial automation, power supplies, motor drives, and HVAC systems.
Employs 4th generation EF series technology for improved performance. Low figure-of-merit combining on-resistance and gate charge for efficiency. Reduced switching and conduction losses. Avalanche energy rated for surge protection.
Through-hole mount TO-247 package facilitates thermal management. Wide operating temperature range from -55°C to 150°C. High power dissipation capability of 156 W. Typical gate charge of 21 nC at Vgs=10 V. Maximum gate-source voltage rating of ±30 V.
Forward voltage drop of 1.2 V during conduction.
This Power MOSFET suits industrial, automotive, and commercial electronic applications requiring robust and efficient power switching components. Configured for through-hole mounting, it supports ease of repair and integration in control boards and power modules.
Explore additional Vishay discrete semiconductor components in our Electronics & Electricals category on EnvMart for comprehensive power and switching solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8.4 A.
It can withstand a maximum drain-source voltage of 600 V.
The typical gate charge at a gate-source voltage of 10 V is 21 nC.
The maximum power dissipation for this MOSFET is rated at 156 W.
It operates reliably within a temperature range of -55°C to 150°C.
This model is designed for through-hole mounting in a TO-247 package.
The forward voltage drop during conduction is 1.2 V.
The maximum gate-source voltage rating is ±30 V.
The dimensions of this model are 33.91 mm in length, 15.29 mm in width, and 4.58 mm in height.
It employs 4th generation EF series technology for improved performance.
This MOSFET is suitable for applications in automotive, industrial machinery, and power supply systems.
The maximum drain-source resistance is 168 mΩ.
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