IXYS GigaMOS Trench HiperFET N-Channel Power MOSFET 100 V, 360 A, 830 W, SOT-227 Package IXFN360N10T

IXYS IXFN360N10T is a high-performance GigaMOS Trench HiperFET N-Channel Power MOSFET designed for demanding power electronics applications. Featuring a maximum continuous drain current of 360 A and a maximum drain-source voltage of 100 V, it is engineered for high current conduction and efficient switching.

This MOSFET comes in a robust 4-pin SOT-227 surface mount package optimized for heat dissipation and mechanical stability. The device offers a maximum power dissipation rating of 830 W, enabling reliable operation under heavy loads. It has an exceptionally low on-state resistance (Rds(on)) of 2.6 milliohms, significantly lowering conduction losses and improving system efficiency.

The device's gate is designed for enhancement mode operation with a typical gate charge of 525 nC at 5 V gate drive, facilitating high-speed switching in power circuits. The maximum gate-source voltage tolerance of ±20 V ensures reliable gate control without risk of damage. It supports operating temperatures ranging from -55°C up to 175°C, making it suitable for industrial electronics environments.

Compact physical dimensions (38.23 mm length, 25.07 mm width, and 9.6 mm height) make this MOSFET adaptable for space-constrained designs. The forward voltage drop of 1.2 V aids in efficient power conversion with reduced losses.

This product is ideal for industrial, power management, automotive electronics, and other applications requiring robust high current switching capability with high efficiency. IXYS GigaMOS technology ensures advanced performance and durability.

High maximum continuous drain current of 360 amperes. Durable 4-pin SOT-227 surface mount package optimized for heat dissipation. Maximum power dissipation rating of 830 Watts allows handling heavy power loads. Low on-resistance of 2.6 milliohms reduces conduction losses significantly.

Wide operating temperature range from -55°C to 175°C suited for harsh environments. Fast switching enabled by a typical gate charge of 525 nanocoulombs. Robust ±20 V gate-source voltage rating offers reliable gate control.

Compact dimensions conducive for industrial PCB layouts. Enhancement mode N-channel for high performance switching. Forward voltage drop of 1.2 V supports efficient power system design. Explore more Power MOSFETs and semiconductor devices in the Electronics & Electricals category at EnvMart for your industrial, automotive, and commercial electronic design needs.