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IXYS HiperFET Polar N-Channel MOSFET, 66 A, 500 V Enhancement, 4-Pin SOT-227 IXFN80N50P
Specifications
| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 9.6mm |
| Length | 38.2mm |
| Model | IXFN80N50P |
| Width | 25.07mm |
| Mount Type | Panel |
| Series | HiperFET, Polar |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-227 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 66A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 700W |
| Typical Gate Charge Qg @ Vgs | 195nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
Key Features
- High-performance N-channel enhancement mode design.
- Maximum drain-source resistance of 65 milliohms for efficient switching.
- Power dissipation up to 700 W for high-load applications.
- Operating temperature range from -55°C to 150°C for demanding environments.
- Typical gate charge of 195 nC enabling fast switching.
- Panel mount type with 4-pin configuration.
- Maximum gate-source voltage of -30 V to +30 V ensures robust gate protection.
- Forward voltage drop of 1.5 V intrinsic diode for lower conduction losses.
Product Description
The IXYS IXFN80N50P is a high-performance HiperFET Polar N-Channel MOSFET designed for power and switching applications requiring robust current handling of up to 66 amperes and a maximum drain-source voltage of 500 volts. Packaged in a sturdy 4-pin SOT-227 module suitable for panel mounting, it provides an efficient and reliable solution for industrial and commercial electronic circuits.
This device features an enhancement mode channel with a low maximum drain-source resistance of 65 milliohms, enabling low conduction losses and improved efficiency in electronic power conversion systems. The typical gate charge of 195 nanocoulombs allows for fast switching speeds, making it ideal for applications such as power supplies, motor control, and inverter circuits.
Engineered to operate across a wide temperature range from -55°C to 150°C, the IXFN80N50P MOSFET withstands harsh ambient conditions typical in industrial, manufacturing, and HVAC systems. Its high maximum power dissipation rating of 700 watts supports demanding load requirements while maintaining thermal stability.
High continuous drain current of 66 A for demanding power requirements. 500 V rated drain-source voltage ensures high voltage tolerance. Low drain-source resistance reduces energy losses and improves efficiency. Fast intrinsic diode operation for enhanced switching performance.
Robust package design with 4 pins to support reliable panel mounting. Wide operating temperature range from -55°C to 150°C for industrial use. Typical gate charge supports high-speed switching applications.
This MOSFET is suitable for integration in industrial power electronics, laboratory power devices, construction equipment control, manufacturing process automation, and HVAC system controllers. Its reliable operation and solid construction make it a preferred choice for power semiconductor applications where efficiency and durability are paramount.
Explore the complete range of IXYS Power MOSFETs and semiconductor components on EnvMart to find ideal parts for your electronic and industrial automation needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 66 A.
It has a maximum drain-source voltage of 500 V.
The typical gate charge is 195 nC, allowing for fast switching speeds.
This MOSFET can dissipate up to 700 W of power.
It operates within a temperature range of -55°C to 150°C.
The IXFN80N50P is packaged in a 4-pin SOT-227 module suitable for panel mounting.
The maximum drain-source resistance is 65 milliohms, which helps reduce conduction losses.
The forward voltage drop of the intrinsic diode is 1.5 V.
This model features an N-channel enhancement mode design.
The maximum gate-source voltage is -30 V to +30 V, providing robust gate protection.
It is suitable for applications such as power supplies, motor control, and inverter circuits.
The height is 9.6 mm and the width is 25.07 mm.
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