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IXYS HiperFET N-Channel Power MOSFET 36 A 1 kV Enhancement Mode 4-Pin SOT-227 IXFN36N100
Specifications
| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 9.6mm |
| Length | 38.23mm |
| Model | IXFN36N100 |
| Width | 25.42mm |
| Mount Type | Panel |
| Series | HiperFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-227 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 36A |
| Maximum Drain Source Voltage Vds | 1kV |
| Maximum Drain Source Resistance Rds | 240mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 700W |
| Typical Gate Charge Qg @ Vgs | 380nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- High-performance N-channel enhancement mode device for power applications.
- SOT-227 package with 4 pins designed for panel mounting.
- Maximum drain-source resistance of 240 milliohms ensures efficient conduction.
- Capable of dissipating up to 700 watts of power.
- Wide operating temperature range from -55°C to 150°C for industrial reliability.
- Maximum gate-source voltage of ±20 V for switching control.
- Compact design suitable for dense electronic assemblies.
Product Description
The IXYS IXFN36N100 is a high-quality N-Channel Power MOSFET designed for demanding electronic applications. This enhancement mode MOSFET supports a maximum continuous drain current of 36 amperes and can handle a drain-source voltage up to 1 kilovolt, making it suitable for power switching and amplification tasks in industrial and commercial electronics.
Featuring the robust HiperFET series technology from IXYS, this device provides excellent switching performance and thermal management. It is housed in a durable 4-pin SOT-227 package optimized for panel mounting, ensuring secure installation and efficient heat dissipation in electronic assemblies.
The device has a maximum drain-source resistance of 240 milliohms, minimizing conduction losses and enhancing overall system efficiency. It also offers a maximum power dissipation capacity of 700 watts, enabling reliable operation under high power conditions.
With a wide operating temperature range from -55°C to 150°C, the IXFN36N100 is suitable for use in challenging environments, including industrial controls, power inverters, motor drives, and renewable energy systems. Its maximum gate-source voltage of plus or minus 20 volts supports stable gate control and switching precision.
Compact physical dimensions of 38.23 mm length, 25.42 mm width, and 9.6 mm height help optimize space in power modules and control boards. High-performance N-channel enhancement mode device for power applications. SOT-227 package with 4 pins designed for panel mounting.
Maximum drain-source resistance of 240 milliohms ensures efficient conduction. Capable of dissipating up to 700 watts of power. Wide operating temperature range from -55°C to 150°C for industrial reliability. Maximum gate-source voltage of ±20 V for switching control.
Compact design suitable for dense electronic assemblies.
This IXYS Power MOSFET is ideal for industrial electronics, power conversion, motor control, HVAC, and energy management applications. Browse more products from IXYS and other semiconductor components at EnvMart for your power device needs.
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Frequently Asked Questions
The IXYS IXFN36N100 has a maximum continuous drain current of 36 amperes.
It can handle a maximum drain-source voltage of 1 kilovolt (1 kV).
This device is capable of dissipating up to 700 watts of power.
The maximum drain-source resistance is 240 milliohms.
The dimensions are 38.23 mm in length, 25.42 mm in width, and 9.6 mm in height.
It operates within a temperature range of -55°C to 150°C.
The IXFN36N100 is housed in a 4-pin SOT-227 package designed for panel mounting.
The maximum gate-source voltage is ±20 volts.
This model features an N-channel enhancement mode.
It is suitable for applications in industrial electronics, power conversion, motor control, HVAC, and energy management.
The typical gate charge is 380 nanocoulombs at the specified gate-source voltage.
The IXYS IXFN36N100 is manufactured in India.
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