DiodesZetex N-Channel MOSFET 11 A 12 V Enhancement 3-Pin SC-59 DMN1019USN-7

DiodesZetex DMN1019USN-7 is a high-performance N-Channel MOSFET transistor suitable for diverse electronic applications requiring efficient power switching. It features a maximum continuous drain current of 11 A and a maximum drain-source voltage of 12 V, making it ideal for low-voltage power management tasks.

The device comes in a compact 3-pin SC-59 surface mount package, facilitating easy integration into densely populated printed circuit boards. Operating in enhancement mode, it provides precise switching control with a low maximum drain-source resistance of 41 milliohms, which reduces energy losses during conduction.

Designed to operate reliably in harsh environments, this MOSFET supports a wide operating temperature range from -55°C to 150°C, suitable for industrial, automotive, and commercial electronics. The maximum power dissipation capability of 1.2 W allows it to handle considerable thermal loads during operation.

Additional technical features include a typical gate charge of 50.6 nanocoulombs, ensuring fast switching capabilities, and a maximum gate-source voltage tolerance of -8 V to +8 V, protecting the gate from voltage spikes. The device also meets the rigorous AEC-Q101 automotive standard, confirming its robustness for automotive use cases.

The small package footprint with dimensions of 3.1 mm length, 1.7 mm width, and 1.3 mm height makes this MOSFET suitable for compact electronic devices. Its forward voltage is rated at 0.8 V, supporting efficient conduction in circuit designs.

Applications of the DiodesZetex DMN1019USN-7 MOSFET include industrial power control systems, automotive electronics, embedded circuit boards, and other environments that require reliable and efficient switching components.

Choose this component to improve energy efficiency and reduce heat generation in your electronic assemblies. It is well supported through available technical documents including datasheets, schematic models, and 3D footprints.

Explore our extensive catalog to find complementary semiconductors and related electronic components at EnvMart. Features a 3-pin SC-59 package for surface mounting. Operates in enhancement mode for precise control. Maximum drain source resistance is 41 milliohms ensuring low power loss.

Supports a wide temperature range from -55°C to 150°C for reliable operation. Typical gate charge of 50.6 nanocoulombs optimizes switching speed. Rated for maximum power dissipation of 1.2 W to handle thermal loads. Meets automotive standard AEC-Q101, suitable for automotive applications.

Compact dimensions with length 3.1 mm, width 1.7 mm, and height 1.3 mm. Maximum gate source voltage range of -8 V to +8 V for robust gate control. Forward voltage rating of 0.8 V ensures efficient conduction.