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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3mm |
| Model | DMN6140L-7 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | DMN |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.9A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 170mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.3W |
| Typical Gate Charge Qg @ Vgs | 8.6nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.75V |
DiodesZetex DMN6140L-7 is an N-Channel MOSFET designed for efficient switching and amplification in electronic circuits. It offers a maximum continuous drain current of 2.9 A and can withstand a maximum drain-source voltage of 60 V. The enhancement mode channel ensures controlled conduction with a maximum drain-source resistance of 170 milliohms, providing low losses and high efficiency.
This MOSFET is housed in a small SOT-23 surface-mount package with three pins, making it ideal for compact electronic designs. It supports a maximum power dissipation of 1.3 W, and operates reliably within a temperature range from -55°C to 150°C, suitable for demanding automotive and industrial environments.
The device features a typical gate charge of 8.6 nC at the rated gate-source voltage range of -20 V to +20 V, ensuring fast switching capabilities. Its compact dimensions of 3 mm length, 1.4 mm width, and 1 mm height facilitate dense PCB layouts.
The DMN6140L-7 MOSFET complies with the AEC-Q101 automotive standard, assuring high quality and reliability in automotive electronic systems. Its low forward voltage of 0.75 V further enhances power efficiency during conduction.
The MOSFET supports a maximum continuous drain current of 2.9 A. It has a maximum drain-source voltage rating of 60 V. The package type is SOT-23 designed for surface mounting. Maximum power dissipation rating is 1.3 W. Operates between -55°C to 150°C operating temperatures.
Typical gate charge is 8.6 nC at designated gate voltages. Dimensions: length 3 mm, width 1.4 mm, height 1 mm. Meets automotive standard AEC-Q101.
This N-channel MOSFET is suitable for industrial, automotive, and consumer electronics applications requiring reliable switching components. It is widely used in power management circuits, signal amplifiers, switching regulators, and other semiconductor-based systems.
Explore more DiodesZetex semiconductor products at EnvMart for your electronics design needs.
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